Question

Question #1 (15 Points) A silicon bipolar junction transistor has the following scattering parameters at 800 MHz, with a 100Ω reference impedance: S11-0.25ム100°; S12-0.20し540; s21-2.5し80°; $22 = 0.40 <-450. The source impedance is Z,-50Ω and the load impedance is ZL-25Ω. Compute the (i) power gain, and (ii) the available power gain Solution

Answer 1

Iven sefeye nce impedance:る: Ioan Soute Impedance =4.5oA Load A asametess impedance Z, = 25 Scatlering patameters 11-0 251-100 12 0 2 o54 2l 22 0.40 45 80 ve need to findw ain and available powex ain The refle ion coefficients at the Source and load are 50 tl0o 150 - 3 -0.33 z, -Zo 25-l00 75 t o25 +loo 25

ow The xeflection Coefficients Seen lookng at input and output po 51252T T3 22 L 0.25/-l0u in = 0.15729253-0401575; o4368 _ (o.bg1-10ー) (-0. l 二0.40 g 2-0.39 2931 Tat:0, 566 I-43.90

2.2.11. I in 0 43 (-06) 4.90 3 11 to 24とい (IIS9 Powe qain

Avaliable power aain dv C 2-5)(1-L-0.35) 5 -lo 2.19 45 2 2 5 Avaiable po 0 an