2. Uniform, steady-state ultraviolet radiation impinges on the surface of a semi-infinite silicon sample in which n-1014 cm3, producing an excess-carrier density at the surface p(0)(0 1011 cm3. Given...
2. Uniform, steady-state ultraviolet radiation impinges on the surface of a semi-infinite silicon sample in which n-1014 cm3, producing an excess-carrier density at the surface p(0)(0 1011 cm3. Given further that τ-lụs, and that the spatial origin is at the irradiated surface. (a) Calculate the hole and electron diffusion currents at the surface (i.c.x-0) and at x -L (b) Since the sample is open-circuited, the total current density at x L must be zero. That is, the carrier distributions must adjust themselves slightly and a drift current is induced. Calculate the drift current density and then the electric field.
2. Uniform, steady-state ultraviolet radiation impinges on the surface of a semi-infinite silicon sample in which n-1014 cm3, producing an excess-carrier density at the surface p(0)(0 1011 cm3. Given further that τ-lụs, and that the spatial origin is at the irradiated surface. (a) Calculate the hole and electron diffusion currents at the surface (i.c.x-0) and at x -L (b) Since the sample is open-circuited, the total current density at x L must be zero. That is, the carrier distributions must adjust themselves slightly and a drift current is induced. Calculate the drift current density and then the electric field.