Question

Problem 1: ASi pip BIT with NAE-1018 cm -3, MDI,-5x 1015 cm?, NAC-1014 Cm -3, and Wi,-3 nm is maintained under equilibrium conditions at room temperature. (a) Sketch the energy band diagram of the transistor that is showing the approximate position of Fermi level in the three device regions. (b) Determine the quasineutral width (W) of the base (c) Determine the minority carrier diffusion length in the base. Use tp millisecond, Mp 300 cm'/V-sec for minority carrier in the base region of the transistor in question. From the answer in part (c), do you think the transistor in question is a suitable transistor for achieving maximum amplification goals? (d)

Just answer part c and d and make sure your answer is properly readable.

Answer 1

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