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spring 2019 Name 19. Gain Margin (dB) is: e1OdByb) 15dBa c) 20 d8;...
spring 2019 Name 19. Gain Margin (dB) is: e1OdByb) 15dBa c) 20 d8; d) 35dB; e) 45d8 20. Phase margin (degree) is close to: a) 0; b) 45pe90) 135) e) 180 21. A MOSFET transistor gm 2m5, Cgs 2pF, Ced 0.5pF, its cut-off frequency, ft, is close to: a) 100 b) 300MHz ) 60OMH)1GHe) SGH 22. The cut-off frequency of a BIT with gm-40m5, r pi-2.5Kohm, r o-20Kohm, c mu 1pF and c pi is close to: a) a) 100MHz: 6) 300MH)c) 600MHE; d) 1GH)SGH 23. An amplifier has input impedance of 25Kohm and voltage gain of-9. To design the upper corner frequency of an amplifier is 1MHz, a capacitor is added between the input and output The valde this capacitor should be close to: a)0.6pF5) 4p) 60pF; d) 600pF; e) cannot be determined 24. Select configuration fora single-transistor amplifier with a gain of 30 dB and input resistance of Mohm. A) common-emitter; b) common-gate: c) common-source; djcommon-collectore implemented by single stage amplifier. 25. Select configuration for a single-transistor amplifier with a gain close to 0 d8 and input resistans S Mohm and load resistor of 5OKohmcommon-emitter; b) common-gate, c) common-source dcommon-collector; e) cannot be implemented by single stage amplifier. 26. Design an oscillator with an amplifier with gain of 12 and phase angle of 160 degree, the feedb network is composed by 4 identical phase shifter. The phase shift of each phase shifter in degr should be close to:40 b) 50; c)100; d)200; e) cannot be determined. tann The following questions are according to the following circuit: design a prototype OpAmp as the schematic shown in the figure below. Q1, Q5, Q11 and R provide bias to the OpAmp For NMOS, Kn' 300uA/, V0.6v, V 21 V/um, Design Vov-0.25V for all NMOS For PMOS, K'-90UAN, IVel-0.65v, V-27V/um, Design Vov-0.2V for all PMOS For BJT Q14, B-200,VA>100V VDD 5V and -VSS-5V MOSFET: gate length for Q8 and Q9 1.0 um, All other gate length 0.25um Design le 30pA through the bias circuit, IREF is the current through R The ratio between gate width of Q1, Q2, Q3, Q4 is W1:W2:w3:w4 1:6: 4:10 27. Identify the type of first stage amplifier: a) inverting amplifier; b) differential amplifier with passive loadc) differential amplifier with current mirror load d) emitter followere) none of above 28. Identify the type of second stage amplifier: a) inverting amplifier; b) differential amplifier with passive loady) differential amplifier with current mirro load d) emitter followere) none of above
spring 2019 Name 19. Gain Margin (dB) is: e1OdByb) 15dBa c) 20 d8; d) 35dB; e) 45d8 20. Phase margin (degree) is close to: a) 0; b) 45pe90) 135) e) 180 21. A MOSFET transistor gm 2m5, Cgs 2pF, Ced 0.5pF, its cut-off frequency, ft, is close to: a) 100 b) 300MHz ) 60OMH)1GHe) SGH 22. The cut-off frequency of a BIT with gm-40m5, r pi-2.5Kohm, r o-20Kohm, c mu 1pF and c pi is close to: a) a) 100MHz: 6) 300MH)c) 600MHE; d) 1GH)SGH 23. An amplifier has input impedance of 25Kohm and voltage gain of-9. To design the upper corner frequency of an amplifier is 1MHz, a capacitor is added between the input and output The valde this capacitor should be close to: a)0.6pF5) 4p) 60pF; d) 600pF; e) cannot be determined 24. Select configuration fora single-transistor amplifier with a gain of 30 dB and input resistance of Mohm. A) common-emitter; b) common-gate: c) common-source; djcommon-collectore implemented by single stage amplifier. 25. Select configuration for a single-transistor amplifier with a gain close to 0 d8 and input resistans S Mohm and load resistor of 5OKohmcommon-emitter; b) common-gate, c) common-source dcommon-collector; e) cannot be implemented by single stage amplifier. 26. Design an oscillator with an amplifier with gain of 12 and phase angle of 160 degree, the feedb network is composed by 4 identical phase shifter. The phase shift of each phase shifter in degr should be close to:40 b) 50; c)100; d)200; e) cannot be determined. tann The following questions are according to the following circuit: design a prototype OpAmp as the schematic shown in the figure below. Q1, Q5, Q11 and R provide bias to the OpAmp For NMOS, Kn' 300uA/, V0.6v, V 21 V/um, Design Vov-0.25V for all NMOS For PMOS, K'-90UAN, IVel-0.65v, V-27V/um, Design Vov-0.2V for all PMOS For BJT Q14, B-200,VA>100V VDD 5V and -VSS-5V MOSFET: gate length for Q8 and Q9 1.0 um, All other gate length 0.25um Design le 30pA through the bias circuit, IREF is the current through R The ratio between gate width of Q1, Q2, Q3, Q4 is W1:W2:w3:w4 1:6: 4:10 27. Identify the type of first stage amplifier: a) inverting amplifier; b) differential amplifier with passive loadc) differential amplifier with current mirror load d) emitter followere) none of above 28. Identify the type of second stage amplifier: a) inverting amplifier; b) differential amplifier with passive loady) differential amplifier with current mirro load d) emitter followere) none of above