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29. Identify the type of third stage amplifier: a) inverting amplifier; b) differential amplifier with passi load; c) differe


network is composed by 4 identical phase shifter. The phase shift of each phase shifter in degree should be close to: a) 40;
29. Identify the type of third stage amplifier: a) inverting amplifier; b) differential amplifier with passi load; c) differential amplifier with current mirror load; d) emitter follower; e) none of above; 30. The Vsg of Q5 should be: a)-1V, b)-0.85% c) 0.65% d)0.85% env 31. To obtain IREF-30μΑ , the value of R should be: a)250ohm; b)25Kohm; c)250Kohm; d)2.5Mohm; e 5Mohm.
network is composed by 4 identical phase shifter. The phase shift of each phase shifter in degree should be close to: a) 40; b) 50; c)100; d)200; e) cannot be determined. The following questions are according to the following circuit: design a prototype OpAmp as the schematic shown in the figure below. 01, Q5, Q11 and R provide bias to the OpAmp. Design Vow-025V for all NMOS, 21 V/um, For NMOS, Kn's 300μA/V2,Vtn-oEV, Van' . For PMOS, K-90μΑ/V, Ivel-o65V, VAp-27V/um.. Design Vow-o2V for all PMOS . For BJT 014, B-200,VA>100V VDD-5V and-VSS =-5V MOSFET: gate length for Q8 and Q9 1.0 um, All other gate lengths 0.25um circuit, IREF is the current through R Q2, Q3, Q4 įs w1W2M3NA ; 1 : 6 . Design g 30HA through the bias The ratio between gate width of Q1, Qu 010 4: 10 Ve 27. Identify the type of first stage amplifier: a) 93 R inverting amplifier; b) differential amplifier with passive load; c) differential amplifier with current mirror load; d) emitter follower; e) none of above; 012 28. Identify the type of second stage amplifier: a) inverting amplifier; b) differential amplifier with passive load; c) differential amplifier with current mirror load; d) emitter follower; e) none of above;
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じoge .om-pk8Je v elb 새nve.Kr NonoS annp31 그REF 下:45 0 2 SS 刁尺= 6 LeeF

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