2.4 A method for reducing interconnection resistance in the polysilicon lines is to use silicide material deposited on top to form polycide. This process can reduce the nominal sheet resistance from 20Ω to 2Ω or even less. For the same purpose, silicide material is also deposited on top of source and drain diffusions in MOS transistors. Thus, a single step deposition of silicide can be achieved on polysilicon gates and source and drain regions of MOS transistors. Discuss how such deposition can be achieved without causing electrical shorts between the gate and source or drain of an individual transistor.
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