a. Using the characteristics of Fig., determine βac at IB = 60 mA and VCE = 4 V.b. Using t...

a. Using the characteristics of Fig., determine βac at IB = 60 mA and VCE = 4 V.

b. Using the characteristics of Fig., determine βac at IB = 30 mA and VCE = 7 V.

c. Using the characteristics of Fig., determine βac at IB = 10 mA and VCE = 10 V.

d. Reviewing the results of parts (a) through (c), does the value of βac change from point to point on the characteristics? Where are the high values located? Can you develop any general conclusions about the value of βac on a set of collector characteristics?

e. The chosen points in this exercise are the same as those employed in Problem. If Problem was performed, compare the levels of βdc and βac for each point and comment on the trend in magnitude for each quantity.

FIG. Characteristics of a silicon transistor in the common-emitter configuration: (a) collector characteristics

Problem

a. Using the characteristics of Fig., determine βdc at IB = 60 μA and VCE = 4 V.

b. Using the characteristics of Fig., determine βdc at IB = 30 μA and VCE = 7 V.

c. Using the characteristics of Fig., determine βdc at IB = 10 μA and VCE = 10 V.

d. Reviewing the results of parts (a) through (c), does the value of b dc change from point to point on the characteristics? Where were the higher values found? Can you develop any general conclusions about the value of βdc on a set of characteristics such as those provided in Fig.?

FIG. Characteristics of a silicon transistor in the common-emitter configuration: (a) collector characteristics