A recent study of the chemical vapor deposition of silica from silane (SiH4) is believed to proceed by the following irreversible two-step mechanism [J. Electrochem. Soc. , 139(9), 2659 ( 1992)]:
SiH4 + S SiH2 •S + H2 (1)
SiH2 •S Si + H2 (2)
This mechanism is somewhat different in that while SiH2 is irreversibly adsorbed, it is highly reactive. In fact, adsorbed SiH2 reacts as fast as it is formed [i.e., r*siH2.S= 0, i.e., PSSH (Chapter 7)], so that it can be assumed to behave as an active intermediate.
(a) Determine if this mechanism is consistent with the following data:
Deposition Rate (mm/min)
0.25
0.5
0.75
0.80
Silane Pressure (mtorr)
5
15
40
60
(b) At what partial pressures of silane would you take the next two data points?
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