A Silicon wafer with thickness of 925 μm is being heated with a uniform heat flux at the l...

A Silicon wafer with thickness of 925 μm is being heated with a uniform heat flux at the lower surface. The Silicon wafer has a thermal conductivity that varies with temperature and can be expressed as k(T) = (a + bT + cT2) W/m-K, where a = 437, b = −1.29, and c = 0.00111. To avoid warping, the temperature difference across the wafer thickness cannot exceed 2 °C. If the upper surface of the Silicon wafer is at a uniform temperature of 600 K, determine the maximum allowable heat flux. Answer: 1.35 × 105 W/m 2