Electron and hole concentrations increase with temperature. For pure silicon, suitable expressions are ρh = −ρe = 6200T1.5e−7000/T C/m3. The functional dependence of the mobilities on temperature is given by µh = 2.3 × 105 T−2 7 m2/V • s and µe = 2.1 × 105 T−2 5 m2/V • s, where the temperature, T, is in degrees Kelvin. Find σ at: (a)0°C; (b) 40°C; (c) 80°C.
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