Question

Experiment 11: Investigating Bandgap Energies, Materials, and Design of Light-Emitting Diodes (LED) 3. For a device to be a g
0 0
Add a comment Improve this question Transcribed image text
Answer #1

Answer (a)

a CB population - Ea/kTNE VB Population : Eg for Silicon Semiconductor = 1.1 ev . Te room temperature = 29.8K K= Bultzman con

Answer (b)

Population ratio = exp ( - Eg/ KT), So, with increasing temperature population ratio also increase and conductivity of intrinsic semiconductor increase the electrons surrounding the semiconductor atoms can break away from their covalent bond and move freely about the lattice.

The main effect of temperature on an intrinsic semiconductor is that resistivity decreases with an increase in temperature. This is because heating increases the concentration of electrons and holes because electron/hole pairs are thermally generated at a higher rate.

  1. Semiconductors act as insulators at low temperatures and conductors at higher temperatures.
  2. Conduction occurs at a higher temperature because the electrons surrounding the semiconductor atoms can break away from their covalent bond and move freely about the lattice
  3. The conductive property of semiconductors forms the basis for understanding how we can use these materials in electrical devices.
Add a comment
Know the answer?
Add Answer to:
Experiment 11: Investigating Bandgap Energies, Materials, and Design of Light-Emitting Diodes (LED) 3. For a device...
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Not the answer you're looking for? Ask your own homework help question. Our experts will answer your question WITHIN MINUTES for Free.
Similar Homework Help Questions
ADVERTISEMENT
Free Homework Help App
Download From Google Play
Scan Your Homework
to Get Instant Free Answers
Need Online Homework Help?
Ask a Question
Get Answers For Free
Most questions answered within 3 hours.
ADVERTISEMENT
ADVERTISEMENT
ADVERTISEMENT