1)
In metal , conduction and valence bands overlap.
So, there is free flow of electrons.
1 is Metal.
In insulators, there are large energy gap between conduction and valence bands.
So, electron can’t move from valence band to conduction band.
Thats why insulator do not conduct electricity
3 in insulator.
Semiconductor have medium difference in energy between conduction and valence bands.
2 is Semiconductor
Answer:
1 -> metal
2 -> Semiconductor
3 -> insulator
4. Label the following energy level diagrams using the appropriate type of conduction term (insulator, metal,...
4. Label the following energy level diagrams using the appropriate type of conduction term (insulator, metal, semiconductor) 3. 2. 1.
(2) In a semiconductor with an energy gap Eg between the valence and the conduction bands we can take Ef (the Fermi energy) to be halfway between the bands (see figure below): Conduction band Energy gap Eg Valence band Semiconductor a. Show that for a typical semiconductor or insulator at room temperature the Fermi- Dirac factor is approximately equal to exp(-E 2kBT). (Typical Eg for semi-conductors ranges from about 0.5eV to 6eV at T-293K.) b. In heavily doped n-type silicon,...
4. Label each band diagram below with an appropriate label.(4) Draw the band diagram for a p-type and n-type semiconductor(4). Briefly describe an experiment that you could perform to distinguish between a conductor and a semiconductor (they both look shiny and hard at room temperature).(2) (10 points) (d (rt o :ODH Energy
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
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4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band structure for metal and p-type semiconductor? (b) Will the junction be ohmic or Schottky? Why? (c) If the doping in the Si layer is p-1017cm-3. Фт=3eV,猛2.5eV, Ea (Si)|JeV, д-15x100 cm-3, calculate Vin and energy barrier height Фь.? 4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band structure for metal and p-type...
3. Energy Diagrams: Using the axes below, draw an energy diagram for an endothermic reaction. Label the following in your diagram: The reactants "The products "The activation energy "The total energy gained or lost by the reaction (AH) reaction progress
(c) (10 marks) Metal ions are important in biological systems. Using diagrams as appropriate to illustrate your answer to explain the following: (i) The roles mono- and divalent-metal ions play in stabilising the secondary and tertiary structure of nucleic acids.
E(k)t Er K. 4. (Advanced Level) Graphene is a special type of material which is two- dimensional and has a linear E-k diagram. The conduction and valence bands touch each other at a singularity, known as the Dirac point. In the unexcited state, the valence band is completely filled, while the conduction band is completely empty From the E-k diagram shown above, deduce the equation of the E-k curve. Hence, from the equation you deduced, speculate the special properties of...
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a Schottky Contact at OV bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias ypes ot Metal-Semiconddcto Contacts Metal Metal P-type implies holes are the majority Valence band determines MS junction behavior . N-type implies electrons are the majority Conduction band determines MS junction behavior . . N-type SchottkyP-type...