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4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band st...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with elec...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
Q.4. (a) What is stimulated emission? Discuss the operation of a LASER diode including a band...
Q.4. (a) What is stimulated emission? Discuss the operation of a LASER diode including a band diagram. (10 pts) (b) Explain quantum mechanical tunneling with an energy band digram. (5) (b) A student was asked to fabricate an ohmic contact. After fabrication, the student found that it was not a contact, but a Schottky diode that she or he fabricated. What mistake could the student have made? Use Figures 3.a and 3,b to explain the mistake. (5 pts) Silicide N...
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a ...
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a Schottky Contact at OV bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias ypes ot Metal-Semiconddcto Contacts Metal Metal P-type implies holes are the majority Valence band determines MS junction behavior . N-type implies electrons are the majority Conduction band determines MS junction behavior . . N-type SchottkyP-type...
It is about our school's assginment. But i cannot understand and figure out how to solve it.. Ser...
It is about our school's
assginment. But i cannot understand and figure out how to solve
it.. Seriously i need your help. Thank you.
Assignment: Consider a thin Si sample with two metallic contacts on each side. The structure is at room temperature in thermal equilibrium and the doping is ND1015 cm everywhere. The Schottky barrier height of both metal-semiconductor junctions is qpBn - 0.7 eV. For the following three situations,) calculate the electron and hole concentrations and the electric...
All needed data is given. Kindly solve all parts of the problem (CLEARLY).. assume ni = 1x10^10 i...
All needed data is given. Kindly solve all parts of the
problem (CLEARLY).. assume ni = 1x10^10 if needed
3) Answer the follow questions about a Metal-Silicon MS junctions. Assume a hypothetical metal with a workfunction of Фм-4.60 eV. Assume that the electron affinity of Si is-4.03 eV 3a) Assume that the Si is N-type with N 3b) 3c) 3d) 10and draw an energy band diagram. Indicate the Schottky barrier height on your sketch Assume that the Si is P-type...
Draw an equilibrium band diagram for Si p-n junction and find contact potential? if energy between...
Draw an equilibrium band diagram for Si p-n junction and find contact potential? if energy between Fermi level and conduction band of n-type 97 meV and energy between Fermi level and valence band of p-type 67 meV ?
For a Si p-n junction with p-type doping of 1 x 10^16/cm3 and n-type doping of...
For a Si p-n junction with p-type doping of 1 x 10^16/cm3 and n-type doping of 1 x 10^19/cm3, calculate the built-in potential Vb at 300K, dark, thermal equilibrium condition. Please show the equations and parameters used in the calculation and the value of Ec-Ef, Ef-Ev, and Vb. Please draw a band structure similar to the one in lecture 5 slide 6 based on your results, please also label Ec, Ev, Vb, and Ef in the drawing.
1. A metal/n-GaAs Schottky Barrier is formed by depositing platinum on n-GaAs. The electron affinity of...
1. A metal/n-GaAs Schottky Barrier is formed by depositing platinum on n-GaAs. The electron affinity of GaAs is 4.0 eV. The work function of Pt is 5.0 eV. The doping in GaAs is 1E16/cm3, and Nc=5E17/cm3. i) Draw the thermal equilibrium energy band diagram for the structure ii) Calculate the barrier height and the built-in voltage iii) Calculate the depletion width in GaAs, given ε(total) for GaAs=1E-12 F/cm --> w=sqrt((2*ε*Vbi)/(q*ND)) iv) Calculate the depletion capacitance for 1 cm2 area v)...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
Q.4. (a) What is stimulated emission? Discuss the operation of a LASER diode including a band diagram. (10 pts) (b) Explain quantum mechanical tunneling with an energy band digram. (5) (b) A student was asked to fabricate an ohmic contact. After fabrication, the student found that it was not a contact, but a Schottky diode that she or he fabricated. What mistake could the student have made? Use Figures 3.a and 3,b to explain the mistake. (5 pts) Silicide N...
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a Schottky Contact at OV bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias ypes ot Metal-Semiconddcto Contacts Metal Metal P-type implies holes are the majority Valence band determines MS junction behavior . N-type implies electrons are the majority Conduction band determines MS junction behavior . . N-type SchottkyP-type...
It is about our school's
assginment. But i cannot understand and figure out how to solve
it.. Seriously i need your help. Thank you.
Assignment: Consider a thin Si sample with two metallic contacts on each side. The structure is at room temperature in thermal equilibrium and the doping is ND1015 cm everywhere. The Schottky barrier height of both metal-semiconductor junctions is qpBn - 0.7 eV. For the following three situations,) calculate the electron and hole concentrations and the electric...
All needed data is given. Kindly solve all parts of the
problem (CLEARLY).. assume ni = 1x10^10 if needed
3) Answer the follow questions about a Metal-Silicon MS junctions. Assume a hypothetical metal with a workfunction of Фм-4.60 eV. Assume that the electron affinity of Si is-4.03 eV 3a) Assume that the Si is N-type with N 3b) 3c) 3d) 10and draw an energy band diagram. Indicate the Schottky barrier height on your sketch Assume that the Si is P-type...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
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