(a)A third type of photon-related electron transitions in an atom is stimulated emission. Suppose an electron is in a higher energy level and a photon comes along with an energy equal to the difference between the electron's energy and a lower energy. What will happen is that the photon will stimulate the electron to fall into the lower energy state, thereby emitting a photon. The emitted photon will have the same energy as the original photon, and viewed as waves we will then have two waves emerging from the atom in phase with the same frequency. Such waves will constructively interfere, leading to a more intense wave.
(b) Quantum mechanical tunneling describes the transition of carriers through a classically forbidden energy state. This can be an electron tunneling from the semiconductor through a dielectric, which represents an energy barrier, to the gate contact of an MOS structure. Even if the energy barrier is higher than the electron energy, there is quantum mechanically a finite probability of this transition. The reason lies in the wavelike behavior of particles on the quantum scale where the wave function describes the probability of finding an electron at a certain position in space. As the wave function penetrates the barrier and can even extend to the other side, quantum mechanics predict a non-zero probability for an electron to be on the other side.
(d) schottky diode are used in
RF mixer and detector diode
Power Rectifier
Solar cell applications
Clamp diode
Use of ohmic contact:
The RC time constant associated with contact resistance can limit the frequency response of devices. The charging and discharging of the leads resistance is a major cause of power dissipation in high clock rate digital electronics. Contact resistance causes power dissipation via Joule heating in low frequency and analog circuits (for example, solar cells) made from less common semiconductors
Q.4. (a) What is stimulated emission? Discuss the operation of a LASER diode including a band...
2. Design a Schottky Contact with N-type Silicon a. b. c. Identify a metal that farms a Schottky Contact at 0V bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias. ypes ot Metal-Semiconductor Contacts Metal Metal N-type implies electrons are the majority Conduction band determines MS junction behavior type implies holes are the majority Valence band determines MS junction behavior . . N-type Schottky P-type Schottky...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band structure for metal and p-type semiconductor? (b) Will the junction be ohmic or Schottky? Why? (c) If the doping in the Si layer is p-1017cm-3. Фт=3eV,猛2.5eV, Ea (Si)|JeV, д-15x100 cm-3, calculate Vin and energy barrier height Фь.?
4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band structure for metal and p-type...