ypes ot Metal-Semiconductor Contacts Metal Metal N-type implies electrons are the majority Conduction band determines MS junction behavior type implies holes are the majority Valence band determines MS junction behavior . . N-type Schottky P-type Schottky N-type Ohmic P-type Ohmic Ec Work Function E, Metal Motal
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2. Design a Schottky Contact with N-type Silicon a. b. c. Identify a metal that farms a Schottky ...
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a ...
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a Schottky Contact at OV bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias ypes ot Metal-Semiconddcto Contacts Metal Metal P-type implies holes are the majority Valence band determines MS junction behavior . N-type implies electrons are the majority Conduction band determines MS junction behavior . . N-type SchottkyP-type...
5. For the following Metal-Semiconductor Contacts, calculate the built-in bias and depletion widt...
5. For the following Metal-Semiconductor Contacts, calculate the built-in bias and depletion width, and identify the type of contact. Assume 0V bias a. Pt-Silicon (Na b. Ti-Silicon (Nd c. Cu- Silicon (Nd 1e13, Nd 1e3) le 16, Na 1e2) 1e20, Na- 1e3) 6. Sketch a Cross-Section of the following junctions, label the charge of the depletion region and polarity of forward bias. Choose the proper semiconductor and metal for each junction. N-type Tunnel MS Junction P-type Tunnel MS Junction PN...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with elec...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
1. Draw the band diagram of Schottky and Ohmic contact at metal/n-type silicon. Explain why ohmic...
1. Draw the band diagram of Schottky and Ohmic contact at metal/n-type silicon. Explain why ohmic contact cannot be formed using common metals
Problem 7: MS contact n-type Si Consider a contact between NiSi and n-type silicon with N 10 cm m...
All needed data is given. Please solve clearly.
Problem 7: MS contact n-type Si Consider a contact between NiSi and n-type silicon with N 10 cm maintained at T 300K. (a) Draw the equilibrium 0 V) energy-band diagram, indicating numerical values for the Schottky barrier height Фв , depletion-layer width W, Ec-Ep in the neutral region, and built-in potential li (Note: Use the Schottky barrier value given in Lecture #7) (b) Draw the energy-band diagram for an applied bias V-0.5...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
Q.4. (a) What is stimulated emission? Discuss the operation of a LASER diode including a band...
Q.4. (a) What is stimulated emission? Discuss the operation of a LASER diode including a band diagram. (10 pts) (b) Explain quantum mechanical tunneling with an energy band digram. (5) (b) A student was asked to fabricate an ohmic contact. After fabrication, the student found that it was not a contact, but a Schottky diode that she or he fabricated. What mistake could the student have made? Use Figures 3.a and 3,b to explain the mistake. (5 pts) Silicide N...
Problem 5. We want to make a Schottky diode on one surface of an n-type semiconductor, and an ohm...
Problem 5. We want to make a Schottky diode on one surface of an n-type semiconductor, and an ohmic contact on the other side. The electron affinity is 5 eV, bandgap is 1.5 eV, and the Fermi potential (the difference between the Fermi level Ef and the intrinsic level Ei) is 0.25 eV d the values of the work functions of the two metals be? (Give your answer as greater than or less than certain values.) Sketch the band diagram...
need #2 Section #3: For Each of the following Metal-Semiconductor Junctions answer all parts A. Sketch...
need #2
Section #3: For Each of the following Metal-Semiconductor Junctions answer all parts A. Sketch the Band-Bending diagram at UV bias B. Identify the type of Junction and label the polarity of the space charge region. Assume OV bias. C. Sketch the Band-Bending diagram under Forward Bias D. Sketch the Band-Bending diagram under Reverse Bias 1. Metal: Aluminum (W = 4.25eV). Semiconductor: Silicon (NA = 1e15cm, No = 1e5cm) 2. Metal: Cadmium (W= 4.08eV). Semiconductor: GaN (NA = Ocm,...
2. (20 pts) - A Silicon sample doped n-type with Nd = 5x10 cm has an...
2. (20 pts) - A Silicon sample doped n-type with Nd = 5x10 cm has an ideal Schottky barrier formed on its surface. The Silicon electron affinity is 4.0 eV, and the Silicon bandgap is 1.1 eV. The metal work function is 4.7 eV. Draw the equilibrium band diagram and for the reverse bias diagram with Vr = 3 V. In each diagram show the numerical values for OB, Vo , (Vo + Vr), EFs - Ej, Ec-EFs, and qVr
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a Schottky Contact at OV bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias ypes ot Metal-Semiconddcto Contacts Metal Metal P-type implies holes are the majority Valence band determines MS junction behavior . N-type implies electrons are the majority Conduction band determines MS junction behavior . . N-type SchottkyP-type...
5. For the following Metal-Semiconductor Contacts, calculate the built-in bias and depletion width, and identify the type of contact. Assume 0V bias a. Pt-Silicon (Na b. Ti-Silicon (Nd c. Cu- Silicon (Nd 1e13, Nd 1e3) le 16, Na 1e2) 1e20, Na- 1e3) 6. Sketch a Cross-Section of the following junctions, label the charge of the depletion region and polarity of forward bias. Choose the proper semiconductor and metal for each junction. N-type Tunnel MS Junction P-type Tunnel MS Junction PN...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
1. Draw the band diagram of Schottky and Ohmic contact at metal/n-type silicon. Explain why ohmic contact cannot be formed using common metals
All needed data is given. Please solve clearly.
Problem 7: MS contact n-type Si Consider a contact between NiSi and n-type silicon with N 10 cm maintained at T 300K. (a) Draw the equilibrium 0 V) energy-band diagram, indicating numerical values for the Schottky barrier height Фв , depletion-layer width W, Ec-Ep in the neutral region, and built-in potential li (Note: Use the Schottky barrier value given in Lecture #7) (b) Draw the energy-band diagram for an applied bias V-0.5...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
Q.4. (a) What is stimulated emission? Discuss the operation of a LASER diode including a band diagram. (10 pts) (b) Explain quantum mechanical tunneling with an energy band digram. (5) (b) A student was asked to fabricate an ohmic contact. After fabrication, the student found that it was not a contact, but a Schottky diode that she or he fabricated. What mistake could the student have made? Use Figures 3.a and 3,b to explain the mistake. (5 pts) Silicide N...
Problem 5. We want to make a Schottky diode on one surface of an n-type semiconductor, and an ohmic contact on the other side. The electron affinity is 5 eV, bandgap is 1.5 eV, and the Fermi potential (the difference between the Fermi level Ef and the intrinsic level Ei) is 0.25 eV d the values of the work functions of the two metals be? (Give your answer as greater than or less than certain values.) Sketch the band diagram...
need #2
Section #3: For Each of the following Metal-Semiconductor Junctions answer all parts A. Sketch the Band-Bending diagram at UV bias B. Identify the type of Junction and label the polarity of the space charge region. Assume OV bias. C. Sketch the Band-Bending diagram under Forward Bias D. Sketch the Band-Bending diagram under Reverse Bias 1. Metal: Aluminum (W = 4.25eV). Semiconductor: Silicon (NA = 1e15cm, No = 1e5cm) 2. Metal: Cadmium (W= 4.08eV). Semiconductor: GaN (NA = Ocm,...
2. (20 pts) - A Silicon sample doped n-type with Nd = 5x10 cm has an ideal Schottky barrier formed on its surface. The Silicon electron affinity is 4.0 eV, and the Silicon bandgap is 1.1 eV. The metal work function is 4.7 eV. Draw the equilibrium band diagram and for the reverse bias diagram with Vr = 3 V. In each diagram show the numerical values for OB, Vo , (Vo + Vr), EFs - Ej, Ec-EFs, and qVr
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