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5. For the following Metal-Semiconductor Contacts, calculate the built-in bias and depletion widt...
2. Design a Schottky Contact with N-type Silicon a. b. c. Identify a metal that farms a Schottky ...
2. Design a Schottky Contact with N-type Silicon a. b. c. Identify a metal that farms a Schottky Contact at 0V bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias. ypes ot Metal-Semiconductor Contacts Metal Metal N-type implies electrons are the majority Conduction band determines MS junction behavior type implies holes are the majority Valence band determines MS junction behavior . . N-type Schottky P-type Schottky...
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a ...
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a Schottky Contact at OV bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias ypes ot Metal-Semiconddcto Contacts Metal Metal P-type implies holes are the majority Valence band determines MS junction behavior . N-type implies electrons are the majority Conduction band determines MS junction behavior . . N-type SchottkyP-type...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with elec...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
need #2 Section #3: For Each of the following Metal-Semiconductor Junctions answer all parts A. Sketch...
need #2
Section #3: For Each of the following Metal-Semiconductor Junctions answer all parts A. Sketch the Band-Bending diagram at UV bias B. Identify the type of Junction and label the polarity of the space charge region. Assume OV bias. C. Sketch the Band-Bending diagram under Forward Bias D. Sketch the Band-Bending diagram under Reverse Bias 1. Metal: Aluminum (W = 4.25eV). Semiconductor: Silicon (NA = 1e15cm, No = 1e5cm) 2. Metal: Cadmium (W= 4.08eV). Semiconductor: GaN (NA = Ocm,...
(iv) [2 Marks] A pn-junction has a built-in potential voltage of 1V across the junction. The width of the depletion reg...
(iv) [2 Marks] A pn-junction has a built-in potential voltage of 1V across the junction. The width of the depletion region is 1um. The acceptor doping is NA 2 x 1015cm-3 in the P-side and a donor doping is Np = 8 x 1015cm-3 on the N-side. If the reference position x 0 is the edge of the depletion region on the P-side and the P region is on the left of the N region then where does the maximum...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of The total current density Conductivity - Problem 2 Consider Germanium sample with the following characteristics the electron and hole mobility for Ge is 0.39 and 0.19 m2N.s The electron and hole effectives masses are 0.56me and 0.4 me The energy gap is 0.67 eV at T-27°C 1) 2) Find the intrinsic carrier concentration for Ge What is the resistivity of the Ge sample...
6. (14) A silicon wafer (Si: ni=10cm-3 and Er=11 ) is used to make a PN...
6. (14) A silicon wafer (Si: ni=10cm-3 and Er=11 ) is used to
make a PN junction over a circular area with a diameter r=1mm.
) A silicon wafer (Si: n = 100cm 3 and ε = 11) is used to make a PN junction over a circular area with a diameter r=1 mm. Aluminum is used as a p-type dopant with density of 101cm), and Arsenic as an n-type dopant with density of 10'5cm3. (a) (4) Find the Fermi...
2 photos The depletion layer width for different junctions is given by the following equations: w...
2
photos
The depletion layer width for different junctions is given by the following equations: w = het w = jane te pare VO w = (1280XL) Intrinsic carrier concentration of silicon, n., is 9.65 x 10 cm 1) The expressions for minority carrier diffusion length and diffusion coefficients and thermal velocity are as follows (for n-and p-type materials). L. - (Dpt) La = (Dat)* Và = To 1/NA in p-type material 1 - 1/(RexNA), where Re is the recombination...
1. A metal/n-GaAs Schottky Barrier is formed by depositing platinum on n-GaAs. The electron affinity of...
1. A metal/n-GaAs Schottky Barrier is formed by depositing platinum on n-GaAs. The electron affinity of GaAs is 4.0 eV. The work function of Pt is 5.0 eV. The doping in GaAs is 1E16/cm3, and Nc=5E17/cm3. i) Draw the thermal equilibrium energy band diagram for the structure ii) Calculate the barrier height and the built-in voltage iii) Calculate the depletion width in GaAs, given ε(total) for GaAs=1E-12 F/cm --> w=sqrt((2*ε*Vbi)/(q*ND)) iv) Calculate the depletion capacitance for 1 cm2 area v)...
2. Design a Schottky Contact with N-type Silicon a. b. c. Identify a metal that farms a Schottky Contact at 0V bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias. ypes ot Metal-Semiconductor Contacts Metal Metal N-type implies electrons are the majority Conduction band determines MS junction behavior type implies holes are the majority Valence band determines MS junction behavior . . N-type Schottky P-type Schottky...
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a Schottky Contact at OV bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias ypes ot Metal-Semiconddcto Contacts Metal Metal P-type implies holes are the majority Valence band determines MS junction behavior . N-type implies electrons are the majority Conduction band determines MS junction behavior . . N-type SchottkyP-type...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
need #2
Section #3: For Each of the following Metal-Semiconductor Junctions answer all parts A. Sketch the Band-Bending diagram at UV bias B. Identify the type of Junction and label the polarity of the space charge region. Assume OV bias. C. Sketch the Band-Bending diagram under Forward Bias D. Sketch the Band-Bending diagram under Reverse Bias 1. Metal: Aluminum (W = 4.25eV). Semiconductor: Silicon (NA = 1e15cm, No = 1e5cm) 2. Metal: Cadmium (W= 4.08eV). Semiconductor: GaN (NA = Ocm,...
(iv) [2 Marks] A pn-junction has a built-in potential voltage of 1V across the junction. The width of the depletion region is 1um. The acceptor doping is NA 2 x 1015cm-3 in the P-side and a donor doping is Np = 8 x 1015cm-3 on the N-side. If the reference position x 0 is the edge of the depletion region on the P-side and the P region is on the left of the N region then where does the maximum...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of The total current density Conductivity - Problem 2 Consider Germanium sample with the following characteristics the electron and hole mobility for Ge is 0.39 and 0.19 m2N.s The electron and hole effectives masses are 0.56me and 0.4 me The energy gap is 0.67 eV at T-27°C 1) 2) Find the intrinsic carrier concentration for Ge What is the resistivity of the Ge sample...
6. (14) A silicon wafer (Si: ni=10cm-3 and Er=11 ) is used to
make a PN junction over a circular area with a diameter r=1mm.
) A silicon wafer (Si: n = 100cm 3 and ε = 11) is used to make a PN junction over a circular area with a diameter r=1 mm. Aluminum is used as a p-type dopant with density of 101cm), and Arsenic as an n-type dopant with density of 10'5cm3. (a) (4) Find the Fermi...
2
photos
The depletion layer width for different junctions is given by the following equations: w = het w = jane te pare VO w = (1280XL) Intrinsic carrier concentration of silicon, n., is 9.65 x 10 cm 1) The expressions for minority carrier diffusion length and diffusion coefficients and thermal velocity are as follows (for n-and p-type materials). L. - (Dpt) La = (Dat)* Và = To 1/NA in p-type material 1 - 1/(RexNA), where Re is the recombination...
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