Homework Answers
Schottky contact:
In solid state physics, work function is defined as the distance from the Fermi level to vacuum level.
For Schottky contact:
Work function of metal is greater than work function of semiconductor
Ohmic Contact:
For ohmic contact, work function of metal will be lesser than the work function of semi conductor.
Ohmic contact can not be formed by all common metals because most of the common metals are having work finctions greater than that of semiconductors.
Ohmic contacts are used to allow charge to flow easily in both directions between the two conductors without out blocking due to rectification or power dissipations due to voltage thresholds.
And ohmic contact should have linear current voltage curve.
Not every metal is able to have the above requirements and some special minerals with heavily doped silion will only be used for preparing ohmic contacts.
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1. Draw the band diagram of Schottky and Ohmic contact at metal/n-type silicon. Explain why ohmic...
2. Design a Schottky Contact with N-type Silicon a. b. c. Identify a metal that farms a Schottky ...
2. Design a Schottky Contact with N-type Silicon a. b. c. Identify a metal that farms a Schottky Contact at 0V bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias. ypes ot Metal-Semiconductor Contacts Metal Metal N-type implies electrons are the majority Conduction band determines MS junction behavior type implies holes are the majority Valence band determines MS junction behavior . . N-type Schottky P-type Schottky...
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a ...
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a Schottky Contact at OV bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias ypes ot Metal-Semiconddcto Contacts Metal Metal P-type implies holes are the majority Valence band determines MS junction behavior . N-type implies electrons are the majority Conduction band determines MS junction behavior . . N-type SchottkyP-type...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with elec...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
Problem 7: MS contact n-type Si Consider a contact between NiSi and n-type silicon with N 10 cm m...
All needed data is given. Please solve clearly.
Problem 7: MS contact n-type Si Consider a contact between NiSi and n-type silicon with N 10 cm maintained at T 300K. (a) Draw the equilibrium 0 V) energy-band diagram, indicating numerical values for the Schottky barrier height Фв , depletion-layer width W, Ec-Ep in the neutral region, and built-in potential li (Note: Use the Schottky barrier value given in Lecture #7) (b) Draw the energy-band diagram for an applied bias V-0.5...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
Problem 5. We want to make a Schottky diode on one surface of an n-type semiconductor, and an ohm...
Problem 5. We want to make a Schottky diode on one surface of an n-type semiconductor, and an ohmic contact on the other side. The electron affinity is 5 eV, bandgap is 1.5 eV, and the Fermi potential (the difference between the Fermi level Ef and the intrinsic level Ei) is 0.25 eV d the values of the work functions of the two metals be? (Give your answer as greater than or less than certain values.) Sketch the band diagram...
4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band st...
4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band structure for metal and p-type semiconductor? (b) Will the junction be ohmic or Schottky? Why? (c) If the doping in the Si layer is p-1017cm-3. Фт=3eV,猛2.5eV, Ea (Si)|JeV, д-15x100 cm-3, calculate Vin and energy barrier height Фь.?
4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band structure for metal and p-type...
2. (20 pts) - A Silicon sample doped n-type with Nd = 5x10 cm has an...
2. (20 pts) - A Silicon sample doped n-type with Nd = 5x10 cm has an ideal Schottky barrier formed on its surface. The Silicon electron affinity is 4.0 eV, and the Silicon bandgap is 1.1 eV. The metal work function is 4.7 eV. Draw the equilibrium band diagram and for the reverse bias diagram with Vr = 3 V. In each diagram show the numerical values for OB, Vo , (Vo + Vr), EFs - Ej, Ec-EFs, and qVr
Q.4. (a) What is stimulated emission? Discuss the operation of a LASER diode including a band...
Q.4. (a) What is stimulated emission? Discuss the operation of a LASER diode including a band diagram. (10 pts) (b) Explain quantum mechanical tunneling with an energy band digram. (5) (b) A student was asked to fabricate an ohmic contact. After fabrication, the student found that it was not a contact, but a Schottky diode that she or he fabricated. What mistake could the student have made? Use Figures 3.a and 3,b to explain the mistake. (5 pts) Silicide N...
All needed data is given. Kindly solve all parts of the problem (CLEARLY).. assume ni = 1x10^10 i...
All needed data is given. Kindly solve all parts of the
problem (CLEARLY).. assume ni = 1x10^10 if needed
3) Answer the follow questions about a Metal-Silicon MS junctions. Assume a hypothetical metal with a workfunction of Фм-4.60 eV. Assume that the electron affinity of Si is-4.03 eV 3a) Assume that the Si is N-type with N 3b) 3c) 3d) 10and draw an energy band diagram. Indicate the Schottky barrier height on your sketch Assume that the Si is P-type...
2. Design a Schottky Contact with N-type Silicon a. b. c. Identify a metal that farms a Schottky Contact at 0V bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias. ypes ot Metal-Semiconductor Contacts Metal Metal N-type implies electrons are the majority Conduction band determines MS junction behavior type implies holes are the majority Valence band determines MS junction behavior . . N-type Schottky P-type Schottky...
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a Schottky Contact at OV bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias ypes ot Metal-Semiconddcto Contacts Metal Metal P-type implies holes are the majority Valence band determines MS junction behavior . N-type implies electrons are the majority Conduction band determines MS junction behavior . . N-type SchottkyP-type...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
All needed data is given. Please solve clearly.
Problem 7: MS contact n-type Si Consider a contact between NiSi and n-type silicon with N 10 cm maintained at T 300K. (a) Draw the equilibrium 0 V) energy-band diagram, indicating numerical values for the Schottky barrier height Фв , depletion-layer width W, Ec-Ep in the neutral region, and built-in potential li (Note: Use the Schottky barrier value given in Lecture #7) (b) Draw the energy-band diagram for an applied bias V-0.5...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
Problem 5. We want to make a Schottky diode on one surface of an n-type semiconductor, and an ohmic contact on the other side. The electron affinity is 5 eV, bandgap is 1.5 eV, and the Fermi potential (the difference between the Fermi level Ef and the intrinsic level Ei) is 0.25 eV d the values of the work functions of the two metals be? (Give your answer as greater than or less than certain values.) Sketch the band diagram...
4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band structure for metal and p-type semiconductor? (b) Will the junction be ohmic or Schottky? Why? (c) If the doping in the Si layer is p-1017cm-3. Фт=3eV,猛2.5eV, Ea (Si)|JeV, д-15x100 cm-3, calculate Vin and energy barrier height Фь.?
4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band structure for metal and p-type...
2. (20 pts) - A Silicon sample doped n-type with Nd = 5x10 cm has an ideal Schottky barrier formed on its surface. The Silicon electron affinity is 4.0 eV, and the Silicon bandgap is 1.1 eV. The metal work function is 4.7 eV. Draw the equilibrium band diagram and for the reverse bias diagram with Vr = 3 V. In each diagram show the numerical values for OB, Vo , (Vo + Vr), EFs - Ej, Ec-EFs, and qVr
Q.4. (a) What is stimulated emission? Discuss the operation of a LASER diode including a band diagram. (10 pts) (b) Explain quantum mechanical tunneling with an energy band digram. (5) (b) A student was asked to fabricate an ohmic contact. After fabrication, the student found that it was not a contact, but a Schottky diode that she or he fabricated. What mistake could the student have made? Use Figures 3.a and 3,b to explain the mistake. (5 pts) Silicide N...
All needed data is given. Kindly solve all parts of the
problem (CLEARLY).. assume ni = 1x10^10 if needed
3) Answer the follow questions about a Metal-Silicon MS junctions. Assume a hypothetical metal with a workfunction of Фм-4.60 eV. Assume that the electron affinity of Si is-4.03 eV 3a) Assume that the Si is N-type with N 3b) 3c) 3d) 10and draw an energy band diagram. Indicate the Schottky barrier height on your sketch Assume that the Si is P-type...
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