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Problem 5. We want to make a Schottky diode on one surface of an n-type semiconductor, and an ohm...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with elec...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
Draw the energy band diagram at equilibrium for the p+ /n/p semiconductor heterostructure (p+ indicates a...
Draw the energy band diagram at equilibrium for the p+ /n/p semiconductor heterostructure (p+ indicates a p-type semiconductor which is heavily doped, i.e., more heavily doped than p). You should indicate Ec (conduction band), Ev (valence band), Ei (intrinsic Fermi level), and Ef (Fermi level) throughout the device structure. show your work (i.e., you should start from the diagram of individual material pieces). State any reason for your drawing.
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
9. An n- type germanium semiconductor sample is brought into contact with a p - type...
9. An n- type germanium semiconductor sample is brought into contact with a p - type silicon sample. The germanium sample has a carrier concentra- tion of 4.5 x 1016cm-3 and the silicon sample has a carrier concentration of 1.0 × 1016cm-3. At 300K the intrinsic carrier concentration of germanium is 2.4 × 1013cm-3 and its band gap is 0.66 eV. At 300K the intrinsic carrier concentration of silicon is 1.45 × 1010cm-3 and its band gap is 1.12 eV....
It is desired to make metal / semiconductor rectifier contact with ND = 2x1017cm-3 doped silicon, which of the metals whose work functions are given below you can use. Explain by making the necessary calculations. Find the barrier heights on the Metal and
1-It is desired to make metal / semiconductor rectifier contact with \(\mathrm{N}_{\mathrm{D}}=2 \times 10^{17} \mathrm{~cm}^{-3}\) doped silicon, which of the metals whose work functions are given below you can use. Explain by making the necessary calculations. Find the barrier heights on the Metal and Semiconductor side. Find the depletion width. Electron affinity of Si \(\chi=4 \mathrm{eV},\) Work function of metals \(\emptyset(\mathrm{Al})=4.3 \mathrm{eV}, \emptyset(\mathrm{Mg})=3.7 \mathrm{eV}\), \(\Phi(\mathrm{Pt})=5.65 \mathrm{eV}, \emptyset(\mathrm{Zn})=4.47 \mathrm{eV}, \emptyset(\mathrm{Au})=5.1 \mathrm{eV}, \mathrm{n}_{1}(\mathrm{Si})=1.5 \times 10^{10}\)
An n-type germanium specimen is known to have an electron concentration of 5 x 1022 m-?....
An n-type germanium specimen is known to have an electron concentration of 5 x 1022 m-?. (a) Such type of semiconductor can be produced by the addition of what element to intrinsic germanium? Give an example and explain why it can be used for this purpose. (b) Calculate the electrical conductivity of this material, assuming electron and hole mobilities of 0.1 and 0.05 m²/V s, respectively. (c) Sketch the approximate position of Fermi level in a band diagram for this...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...
i. l e blank(s). A gap suggest two-word in your answer Drift current in semiconductors is...
i. l e blank(s). A gap suggest two-word in your answer Drift current in semiconductors is due to electric [20] tield. Carriers in the band are referred to as statistics is applied to electrons in The semiconductors. The position and principle states that we cannot simultaneously determine the of electrons. Vy is a . while w is a number and Current in the conduction is due to the flow of Extrinsic semiconductors are vii. viii. The wave function in Schrodinger's...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
9. An n- type germanium semiconductor sample is brought into contact with a p - type silicon sample. The germanium sample has a carrier concentra- tion of 4.5 x 1016cm-3 and the silicon sample has a carrier concentration of 1.0 × 1016cm-3. At 300K the intrinsic carrier concentration of germanium is 2.4 × 1013cm-3 and its band gap is 0.66 eV. At 300K the intrinsic carrier concentration of silicon is 1.45 × 1010cm-3 and its band gap is 1.12 eV....
An n-type germanium specimen is known to have an electron concentration of 5 x 1022 m-?. (a) Such type of semiconductor can be produced by the addition of what element to intrinsic germanium? Give an example and explain why it can be used for this purpose. (b) Calculate the electrical conductivity of this material, assuming electron and hole mobilities of 0.1 and 0.05 m²/V s, respectively. (c) Sketch the approximate position of Fermi level in a band diagram for this...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...
i. l e blank(s). A gap suggest two-word in your answer Drift current in semiconductors is due to electric [20] tield. Carriers in the band are referred to as statistics is applied to electrons in The semiconductors. The position and principle states that we cannot simultaneously determine the of electrons. Vy is a . while w is a number and Current in the conduction is due to the flow of Extrinsic semiconductors are vii. viii. The wave function in Schrodinger's...
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