Question

1-It is desired to make metal / semiconductor rectifier contact with \(\mathrm{N}_{\mathrm{D}}=2 \times 10^{17} \mathrm{~cm}^{-3}\) doped silicon, which of the metals whose work functions are given below you can use. Explain by making the necessary calculations. Find the barrier heights on the Metal and Semiconductor side. Find the depletion width. Electron affinity of Si \(\chi=4 \mathrm{eV},\) Work function of metals \(\emptyset(\mathrm{Al})=4.3 \mathrm{eV}, \emptyset(\mathrm{Mg})=3.7 \mathrm{eV}\), \(\Phi(\mathrm{Pt})=5.65 \mathrm{eV}, \emptyset(\mathrm{Zn})=4.47 \mathrm{eV}, \emptyset(\mathrm{Au})=5.1 \mathrm{eV}, \mathrm{n}_{1}(\mathrm{Si})=1.5 \times 10^{10}\)

Answer 1