Draw an equilibrium band diagram for Si p-n junction and find contact potential? if energy between...
Draw an equilibrium band diagram for Si p-n junction
and find contact potential? if
energy between Fermi level and conduction band of n-type 97 meV and
energy
between Fermi level and valence band of p-type 67 meV ?
Homework Answers
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Draw an equilibrium band diagram for Si p-n junction
and find contact potential? if
energy between...
Draw the energy band diagram at equilibrium for the p+ /n/p semiconductor heterostructure (p+ indicates a...
Draw the energy band diagram at equilibrium for the p+ /n/p semiconductor heterostructure (p+ indicates a p-type semiconductor which is heavily doped, i.e., more heavily doped than p). You should indicate Ec (conduction band), Ev (valence band), Ei (intrinsic Fermi level), and Ef (Fermi level) throughout the device structure. show your work (i.e., you should start from the diagram of individual material pieces). State any reason for your drawing.
Q2 (24%) A Si PN junction is operating at 300K. The device parameters are as follows:...
Q2 (24%) A Si PN junction is operating at 300K. The device parameters are as follows: Na 5X1016 /cm3 D2-10cm2ls Na 1X1016/cm3 D-25 cm2Is Tpo=T10= 5X1078 a. Calculate Vhi . b. Calculate xn and xp c. Plot the electric field strength across the entire pn junction and calculate the peak electric field in the space charge region d. If a forward bias voltage of 0.7V is applied, find the forward current density e. Draw the energy band diagram for the...
Problem 7: MS contact n-type Si Consider a contact between NiSi and n-type silicon with N 10 cm m...
All needed data is given. Please solve clearly.
Problem 7: MS contact n-type Si Consider a contact between NiSi and n-type silicon with N 10 cm maintained at T 300K. (a) Draw the equilibrium 0 V) energy-band diagram, indicating numerical values for the Schottky barrier height Фв , depletion-layer width W, Ec-Ep in the neutral region, and built-in potential li (Note: Use the Schottky barrier value given in Lecture #7) (b) Draw the energy-band diagram for an applied bias V-0.5...
Draw the band diagram (the relative positions of conduction band edge EC, valence band edge Ev,...
Draw the band diagram (the relative positions of conduction band
edge EC, valence band edge Ev, Fermi level EF) for the four
following cases. Clearly note EC −EF, EF −EV, Ei −EF, EG = EC −EV.
Ei is the intrinsic Fermi level. Take NC=NV =1025 m−3, EG=1.1 eV,
ni=1.5×1016 m−3, kT=0.026 eV.
(Q1.1) p-type, NA=5×1023 m−3.
(Q1.2) p-type, NA=5×1021 m−3.
(Q1.3) n-type, ND=5×1023 m−3.
(Q1.4) n-type, ND=5×1021 m−3.
Q2 Draw the band diagram (the relative positions of conduction band edge...
A3. (a) Draw a band diagram and a cross-sectional diagram of an abrupt p-n junction0Marks] with N...
a3. (a) Draw a band diagram and a cross-sectional diagram of an abrupt p-n junction0Marks] with N>N at thermal equilibrium at 300K and label the following: () Diffusion currents, (i) Drift currents (ii) Fermi level, (iv) SCR, (v) QNR, (vi) Contact potential with polarity, (vi) Electric field distribution in the SCR, (vii) Electrostatic potential distribution in SCR, (ix) SCR charges, and (x) SCR penetration into the p-and n sides. (b) In a p'-n junction at 300K, the n side has...
4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band st...
4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band structure for metal and p-type semiconductor? (b) Will the junction be ohmic or Schottky? Why? (c) If the doping in the Si layer is p-1017cm-3. Фт=3eV,猛2.5eV, Ea (Si)|JeV, д-15x100 cm-3, calculate Vin and energy barrier height Фь.?
4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band structure for metal and p-type...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
5. Sketch the energy band diagram for a p'-n step junction diode at: (a) thermal equilibrium;...
5. Sketch the energy band diagram for a p'-n step junction diode at: (a) thermal equilibrium; (b) forward bias (show with respect to thermal equilibrium) (c) reverse bias (show with respect to thermal equilibrium) (d) in part (a) sketch a new diagram showing the carrier flux and the four current components with respect to each other.
Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band...
Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy E, and the Fermi energy E. 1. 2 marks Find an expression for Ee -Ef, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration ND. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon so that Ec- E0.2 eV. 3 marks
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a ...
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a Schottky Contact at OV bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias ypes ot Metal-Semiconddcto Contacts Metal Metal P-type implies holes are the majority Valence band determines MS junction behavior . N-type implies electrons are the majority Conduction band determines MS junction behavior . . N-type SchottkyP-type...
Q2 (24%) A Si PN junction is operating at 300K. The device parameters are as follows: Na 5X1016 /cm3 D2-10cm2ls Na 1X1016/cm3 D-25 cm2Is Tpo=T10= 5X1078 a. Calculate Vhi . b. Calculate xn and xp c. Plot the electric field strength across the entire pn junction and calculate the peak electric field in the space charge region d. If a forward bias voltage of 0.7V is applied, find the forward current density e. Draw the energy band diagram for the...
All needed data is given. Please solve clearly.
Problem 7: MS contact n-type Si Consider a contact between NiSi and n-type silicon with N 10 cm maintained at T 300K. (a) Draw the equilibrium 0 V) energy-band diagram, indicating numerical values for the Schottky barrier height Фв , depletion-layer width W, Ec-Ep in the neutral region, and built-in potential li (Note: Use the Schottky barrier value given in Lecture #7) (b) Draw the energy-band diagram for an applied bias V-0.5...
Draw the band diagram (the relative positions of conduction band
edge EC, valence band edge Ev, Fermi level EF) for the four
following cases. Clearly note EC −EF, EF −EV, Ei −EF, EG = EC −EV.
Ei is the intrinsic Fermi level. Take NC=NV =1025 m−3, EG=1.1 eV,
ni=1.5×1016 m−3, kT=0.026 eV.
(Q1.1) p-type, NA=5×1023 m−3.
(Q1.2) p-type, NA=5×1021 m−3.
(Q1.3) n-type, ND=5×1023 m−3.
(Q1.4) n-type, ND=5×1021 m−3.
Q2 Draw the band diagram (the relative positions of conduction band edge...
a3. (a) Draw a band diagram and a cross-sectional diagram of an abrupt p-n junction0Marks] with N>N at thermal equilibrium at 300K and label the following: () Diffusion currents, (i) Drift currents (ii) Fermi level, (iv) SCR, (v) QNR, (vi) Contact potential with polarity, (vi) Electric field distribution in the SCR, (vii) Electrostatic potential distribution in SCR, (ix) SCR charges, and (x) SCR penetration into the p-and n sides. (b) In a p'-n junction at 300K, the n side has...
4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band structure for metal and p-type semiconductor? (b) Will the junction be ohmic or Schottky? Why? (c) If the doping in the Si layer is p-1017cm-3. Фт=3eV,猛2.5eV, Ea (Si)|JeV, д-15x100 cm-3, calculate Vin and energy barrier height Фь.?
4. A metal and p-type Si (Ds > Фт) are brought together to form Junction. (a) Draw energy band structure for metal and p-type...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
5. Sketch the energy band diagram for a p'-n step junction diode at: (a) thermal equilibrium; (b) forward bias (show with respect to thermal equilibrium) (c) reverse bias (show with respect to thermal equilibrium) (d) in part (a) sketch a new diagram showing the carrier flux and the four current components with respect to each other.
Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy E, and the Fermi energy E. 1. 2 marks Find an expression for Ee -Ef, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration ND. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon so that Ec- E0.2 eV. 3 marks
4. Design a Schottky Contact with P-type Gallium Arsenide a. b. c. Identify a metal that forms a Schottky Contact at OV bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias ypes ot Metal-Semiconddcto Contacts Metal Metal P-type implies holes are the majority Valence band determines MS junction behavior . N-type implies electrons are the majority Conduction band determines MS junction behavior . . N-type SchottkyP-type...
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