Question

Draw the band diagram (the relative positions of conduction band edge EC, valence band edge Ev, Fermi level EF) for the four following cases. Clearly note EC −EF, EF −EV, Ei −EF, EG = EC −EV. Ei is the intrinsic Fermi level. Take NC=NV =1025 m−3, EG=1.1 eV, ni=1.5×1016 m−3, kT=0.026 eV.

(Q1.1) p-type, NA=5×1023 m−3.

(Q1.2) p-type, NA=5×1021 m−3.

(Q1.3) n-type, ND=5×1023 m−3.

(Q1.4) n-type, ND=5×1021 m−3.

Q2 Draw the band diagram (the relative positions of conduction band edge Ec, valence band edge EU, Fermi level EF) for the four following cases. Clearly note Ec - EF, EF - Ev, Ei - EF, EG- Ec - Ev. E is the intrinsic Fermi level. Take Nc Ny-1025 m-3, Ec1.1 eV, n 1.5x1016 m-3, kT-0.026 eV. [80 pts] (Q1.1) p-type, ŅA=5x1023 m-3 (Q1.2) p-type, Л-5x 1021 m-3 (Q1.3) n-type, ND-5x1023 m3. (Q1.4) n-type, ND-5x1021 m-3.

0 0
Add a comment Improve this question Transcribed image text
Answer #1

2. 5 =10 on 2 =5x10 + 23 3 2- 2. 3 23 ef . Ei_ (0,021) (-17.322) = -0. Ч503 eV 25 0 -0.7786냐 e.VCc ei 1-4에2 1 2 16 o 3 ל1.ey...-1.-Vio:33eveet23 2.3 23 叭 e 구·31)=-0-4503 alas 2] 2 Krk (L: Io.ozi)(-)2. 구163 9) EA 1.1 eVplease rate it up thanks :)

Add a comment
Know the answer?
Add Answer to:
Draw the band diagram (the relative positions of conduction band edge EC, valence band edge Ev,...
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Not the answer you're looking for? Ask your own homework help question. Our experts will answer your question WITHIN MINUTES for Free.
Similar Homework Help Questions
  • . Assume that the Fermi-level is 0.13 eV below the conduction band edge, EC. Assume Si...

    . Assume that the Fermi-level is 0.13 eV below the conduction band edge, EC. Assume Si (Eg = 1.1 eV) and T = 300 K. Calculate the probability that an electron will occupy a state at EC. Calculate the probability that an electron will occupy a state at EV. Also, calculate the probability that a state at EV will be free of electrons. In this particular case, will the sample be n-type or p-type? Assume that kT=0.025eV at 300K.

  • Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band...

    Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy E, and the Fermi energy E. 1. 2 marks Find an expression for Ee -Ef, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration ND. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon so that Ec- E0.2 eV. 3 marks

  • Draw the energy band diagram at equilibrium for the p+ /n/p semiconductor heterostructure (p+ indicates a...

    Draw the energy band diagram at equilibrium for the p+ /n/p semiconductor heterostructure (p+ indicates a p-type semiconductor which is heavily doped, i.e., more heavily doped than p). You should indicate Ec (conduction band), Ev (valence band), Ei (intrinsic Fermi level), and Ef (Fermi level) throughout the device structure. show your work (i.e., you should start from the diagram of individual material pieces). State any reason for your drawing.

  • 1. Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction...

    1. Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy Ec and the Fermi energy Ep 2 marks Find an expression for Ec - Ep, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration Np. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon that Ec Ef = 0.2 eV So 4 marks

  • (2) In a semiconductor with an energy gap Eg between the valence and the conduction bands we can take Ef (the Fermi ene...

    (2) In a semiconductor with an energy gap Eg between the valence and the conduction bands we can take Ef (the Fermi energy) to be halfway between the bands (see figure below): Conduction band Energy gap Eg Valence band Semiconductor a. Show that for a typical semiconductor or insulator at room temperature the Fermi- Dirac factor is approximately equal to exp(-E 2kBT). (Typical Eg for semi-conductors ranges from about 0.5eV to 6eV at T-293K.) b. In heavily doped n-type silicon,...

  • Please explain part b in details thx! Question 2 At 300 K, the bandgap of GaP is 2.26 eV and the effective density of states at the conduction and valence band edge are 1.8 x 1019 cm23 and 1.9 x 1019...

    Please explain part b in details thx! Question 2 At 300 K, the bandgap of GaP is 2.26 eV and the effective density of states at the conduction and valence band edge are 1.8 x 1019 cm23 and 1.9 x 1019 cm3, respectively. (a) Calculate the intrinsic concentration of GaP at 300K (7 marks) Calculate the GaP effective mass of holes at 300K. (b) (8 marks) (c The GaP sample is now doped with donor concentration of 1021 cm3 with...

  • 3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels...

    3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels and have the properties listed below. Case 1: Case 2: Case 3: Case 4: Ex-Ey = 0.15 eV Ef-Ey=0.88 eV EF-Ey = 0.55 eV Ex-Ey = 1.09 eV The four cases above show the position of the Fermi Level Er relative to the valence band edge Ev.at dilterent doping levels. a) identify each sample as degenerate and nondegenerate. b) which nondegenerate case shows heavy...

  • EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described...

    EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...

  • (a) Assuming that the Fermi level is at the midgap in the intrinsic silicon, calculate the...

    (a) Assuming that the Fermi level is at the midgap in the intrinsic silicon, calculate the probability of finding an electron at the bottom of the conduction band (E=Ec) for three different temperatures: 0K, 20C, 100C? (b) How are these probabilities related to the probabilities of finding a hole at E=Ev, which is the top of the valence band? (c) A sample of silicon is doped with 1016 cm-3 of arsenic and 3x1016 cm-3 of boron. Calculate n, p, and...

  • 1. a. Find the main error in each of the band diagrams shown below. For all...

    1. a. Find the main error in each of the band diagrams shown below. For all of the band diagrams Ny 1019/cm3, Ne- 1019/cm3, ni = 3 x 108/cm". E,-1.25 eV, T = 300 K. Ef Ef EFi Main error: Main error: Main error: Main error: Consider a semiconductor sample with the following characteristics: EG 1.25 eV, T 300 K, Nd 5 x 101*/cm3, Na 1014/cm3, N.-1019/cm3, N.-1019/cm3, ni-3 × 108/cm3. Assume complete ionization b. Find the equilibrium electron and...

ADVERTISEMENT
Free Homework Help App
Download From Google Play
Scan Your Homework
to Get Instant Free Answers
Need Online Homework Help?
Ask a Question
Get Answers For Free
Most questions answered within 3 hours.
ADVERTISEMENT
ADVERTISEMENT
ADVERTISEMENT