Question

Please explain part b in details thx!

Question 2 At 300 K, the bandgap of GaP is 2.26 eV and the effective density of states at the conduction and valence band edge are 1.8 x 1019 cm23 and 1.9 x 1019 cm3, respectively. (a) Calculate the intrinsic concentration of GaP at 300K (7 marks) Calculate the GaP effective mass of holes at 300K. (b) (8 marks) (c The GaP sample is now doped with donor concentration of 1021 cm3 with ionization energy of 0.05 eV. Assuming only donor ionization occurs at 300K determine the electron concentration. (6 marks) (d)Illustrate the energy band diagram for the sample mentioned in Question Q2(c) Show and label the conduction band edge, valence band edge and an electron on the energy level of the dopant. 4 marks)

Answer 1

* T= 300K 93 b) of (n holes at 300k :- Ef feat-, ve mas s af 3 2

-34 2 19 )-73 34 1 3 mp= 0.0194 Ns = 102 l , Ec-Ea o거 Ea- Ey-0.os ev 2

21' 오 -0.05 /8.GA10x 600 오 η = o. 356 x 1020 d) enexgy band diagram 2 conductions-。。。 Ers Valence | | O O O O Ec is Conduction band llge Eu is valence band Edlge yo.os ev