. Assume that the Fermi-level is 0.13 eV below the conduction band edge, EC. Assume Si...
. Assume that the Fermi-level is 0.13 eV below the conduction band edge, EC. Assume Si (Eg = 1.1 eV) and T = 300 K. Calculate the probability that an electron will occupy a state at EC. Calculate the probability that an electron will occupy a state at EV. Also, calculate the probability that a state at EV will be free of electrons. In this particular case, will the sample be n-type or p-type? Assume that kT=0.025eV at 300K.
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. Assume that the Fermi-level is 0.13 eV below the conduction
band edge, EC. Assume Si...
Draw the band diagram (the relative positions of conduction band edge EC, valence band edge Ev,...
Draw the band diagram (the relative positions of conduction band
edge EC, valence band edge Ev, Fermi level EF) for the four
following cases. Clearly note EC −EF, EF −EV, Ei −EF, EG = EC −EV.
Ei is the intrinsic Fermi level. Take NC=NV =1025 m−3, EG=1.1 eV,
ni=1.5×1016 m−3, kT=0.026 eV.
(Q1.1) p-type, NA=5×1023 m−3.
(Q1.2) p-type, NA=5×1021 m−3.
(Q1.3) n-type, ND=5×1023 m−3.
(Q1.4) n-type, ND=5×1021 m−3.
Q2 Draw the band diagram (the relative positions of conduction band edge...
(0) If in GaAs, the Fermi level is 0.30 eV below the conduction band. [10] calculate the thermal equilibrium electron and hole concentration at room temperature. Bandgap of CaAs is 1.42 eV, the effective density of states of the conduction band at 300K i
(0)If in GaAs, the Fermi level is 0.30 eV below the conduction band. [10] calculate the thermal equilibrium electron and hole concentration at room temperature. Bandgap of CaAs is 1.42 eV, the effective density of states of the conduction band at 300K is 4.7x10 cm and the effective density of states of the valence band is 7x10¹ cm³.L213(11)Identify and illustrate with required equations and diagrams, how energy and momentum are conserved in band to band transitions in indirect band gap...
or a Silicon sample energy band diagram shown below, assume room temperature and the band gap Eg 1.1 eV 6) F calculate the probability of a state with energy Ec to be filled; calculate the probabilit...
or a Silicon sample energy band diagram shown below, assume room temperature and the band gap Eg 1.1 eV 6) F calculate the probability of a state with energy Ec to be filled; calculate the probability ofa state with energy Ev to be empty. a. b. 0.2 eV Ее Ef Ev enn l+
or a Silicon sample energy band diagram shown below, assume room temperature and the band gap Eg 1.1 eV 6) F calculate the probability of a state...
Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band...
Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy E, and the Fermi energy E. 1. 2 marks Find an expression for Ee -Ef, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration ND. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon so that Ec- E0.2 eV. 3 marks
Unless otherwise indicated, assume ni = 1010 cm–3, Eg = 1.1 eV, µn = 1000 cm2/V.s,...
Unless otherwise indicated, assume ni = 1010 cm–3, Eg = 1.1 eV, µn = 1000 cm2/V.s, µp = 250 cm2/V.s, εr = 12, ε0 = 8.85×10–14 F/cm, KT/q = 26-mV at 300° Kelvin, q = 1.6×10–19 C, and k = 8.62×10–5. Problem 1 In a particular semiconductor, the probability of occupying a state of an energy kT above Ec is e–10. Determine the position of the Fermi level with respect to Ec in terms of kT. Problem 2 Determine the...
Please explain part b in details thx! Question 2 At 300 K, the bandgap of GaP is 2.26 eV and the effective density of states at the conduction and valence band edge are 1.8 x 1019 cm23 and 1.9 x 1019...
Please explain part b in details thx!
Question 2 At 300 K, the bandgap of GaP is 2.26 eV and the effective density of states at the conduction and valence band edge are 1.8 x 1019 cm23 and 1.9 x 1019 cm3, respectively. (a) Calculate the intrinsic concentration of GaP at 300K (7 marks) Calculate the GaP effective mass of holes at 300K. (b) (8 marks) (c The GaP sample is now doped with donor concentration of 1021 cm3 with...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it i...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
1. Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction...
1. Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy Ec and the Fermi energy Ep 2 marks Find an expression for Ec - Ep, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration Np. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon that Ec Ef = 0.2 eV So 4 marks
3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels...
3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels and have the properties listed below. Case 1: Case 2: Case 3: Case 4: Ex-Ey = 0.15 eV Ef-Ey=0.88 eV EF-Ey = 0.55 eV Ex-Ey = 1.09 eV The four cases above show the position of the Fermi Level Er relative to the valence band edge Ev.at dilterent doping levels. a) identify each sample as degenerate and nondegenerate. b) which nondegenerate case shows heavy...
Calculate how much increase (in eV) of the conduction band edge would be resulted for the...
Calculate how much increase
(in eV) of the conduction band edge would be resulted for the 10th
subband, if you have created a quantum well (i.e., with 1D subband
and 2D dispersion relation) by size quantization in the z-direction
(thickness direction), resulting in a 5 nm-thick channel. In the
parabolic dispersion (E-k) relation we learned in class, mc
(conduction band effective mass) should be used for electron’s
mass. Assume your channel is GaAs (mc for GaAs is 0.07mo, where mo...
Draw the band diagram (the relative positions of conduction band
edge EC, valence band edge Ev, Fermi level EF) for the four
following cases. Clearly note EC −EF, EF −EV, Ei −EF, EG = EC −EV.
Ei is the intrinsic Fermi level. Take NC=NV =1025 m−3, EG=1.1 eV,
ni=1.5×1016 m−3, kT=0.026 eV.
(Q1.1) p-type, NA=5×1023 m−3.
(Q1.2) p-type, NA=5×1021 m−3.
(Q1.3) n-type, ND=5×1023 m−3.
(Q1.4) n-type, ND=5×1021 m−3.
Q2 Draw the band diagram (the relative positions of conduction band edge...
or a Silicon sample energy band diagram shown below, assume room temperature and the band gap Eg 1.1 eV 6) F calculate the probability of a state with energy Ec to be filled; calculate the probability ofa state with energy Ev to be empty. a. b. 0.2 eV Ее Ef Ev enn l+
or a Silicon sample energy band diagram shown below, assume room temperature and the band gap Eg 1.1 eV 6) F calculate the probability of a state...
Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy E, and the Fermi energy E. 1. 2 marks Find an expression for Ee -Ef, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration ND. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon so that Ec- E0.2 eV. 3 marks
Please explain part b in details thx!
Question 2 At 300 K, the bandgap of GaP is 2.26 eV and the effective density of states at the conduction and valence band edge are 1.8 x 1019 cm23 and 1.9 x 1019 cm3, respectively. (a) Calculate the intrinsic concentration of GaP at 300K (7 marks) Calculate the GaP effective mass of holes at 300K. (b) (8 marks) (c The GaP sample is now doped with donor concentration of 1021 cm3 with...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
1. Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy Ec and the Fermi energy Ep 2 marks Find an expression for Ec - Ep, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration Np. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon that Ec Ef = 0.2 eV So 4 marks
3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels and have the properties listed below. Case 1: Case 2: Case 3: Case 4: Ex-Ey = 0.15 eV Ef-Ey=0.88 eV EF-Ey = 0.55 eV Ex-Ey = 1.09 eV The four cases above show the position of the Fermi Level Er relative to the valence band edge Ev.at dilterent doping levels. a) identify each sample as degenerate and nondegenerate. b) which nondegenerate case shows heavy...
Calculate how much increase
(in eV) of the conduction band edge would be resulted for the 10th
subband, if you have created a quantum well (i.e., with 1D subband
and 2D dispersion relation) by size quantization in the z-direction
(thickness direction), resulting in a 5 nm-thick channel. In the
parabolic dispersion (E-k) relation we learned in class, mc
(conduction band effective mass) should be used for electron’s
mass. Assume your channel is GaAs (mc for GaAs is 0.07mo, where mo...
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