Question

Unless otherwise indicated, assume n_i = 10¹⁰ cm^–3, E_g = 1.1 eV, µ_n = 1000 cm²/V.s, µ_p = 250 cm²/V.s, ε_r = 12, ε₀ = 8.85×10^–14 F/cm, KT/q = 26-mV at 300° Kelvin, q = 1.6×10^–19 C, and         k = 8.62×10^–5.

Problem 1

In a particular semiconductor, the probability of occupying a state of an energy kT above E_c is   e^–10. Determine the position of the Fermi level with respect to E_c in terms of kT.

Problem 2

Determine the probability of a state being occupied if its location is at: (a) the Fermi level, and (b) an energy level of E_c + kT. In part (b) assume that E_f is at E_c.

Answer 1

Note : the condition is what determined the position of E_F.

(a)

Problem 2(b)​​​​​

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