Question

Need help solving this questions.

In problems 1-3, Assume n- 100 cm, E1 eV, 1000 cm-/V.s, g.-12, s,-8.85% 10-14 Fern, and KT4-26-my 250 cma/V.s, Problem 1 A silicon sampl equilibrium has electron concentration given asn -e0'x+2305, where x is distance. Determine the (a) position of the Fermi level with respect to the conduction band, Ee, at x-1-um, (b) electron diffusion current density at x-1- m, and (c) sample conductivity at x-0 Problem 2 Consider a silicon PN-junction with acceptor and donor doping concentrations of 1017 cm and 1015 cm- respectively. Determine the (a minority carrier concentration in the n-region, (b) magnitude of the maximum electric field, and (c) depletion region thickness, W, and xp,- Problem 3 Consider the energy band diagram shown aside and E determine the following: The electron concentration at x 1-μm. The probability of filling state B with an electron. The position on x-axis where the material is i-type The electron diffusion current density at x - 1-um. Assume an electric field, , of-8-kV/em a. b. c. d. 0.3 eV Fv e. The drift velocity at x 0.5-um assuming sames f The conductivity of the sample at0 x (um) 0 0.5

Answer 1

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