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5. Sketch the energy band diagram for a p'-n step junction diode at: (a) thermal equilibrium;...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
) With the aid of a diagram, explair the formation of the depletion region in a...
) With the aid of a diagram, explair the formation of the depletion region in a P-n junction diode in thermal equilibrium. State the equilibrium condition for the currents flowing across the junction. Draw the band diagram of a forward biased p-n junction diode. On the diagram sketch the variation of the conduction band edge energy Ec and the valence band edge energy Ey. Sketch the variation of the electric field and potential across the p-n junction. State the changes...
Problem 1. Given a n-p-n bipolar junction transistor, draw the energy band diagrams for (a) thermal...
Problem 1. Given a n-p-n bipolar junction transistor, draw the energy band diagrams for (a) thermal equilibrium and (b) active bias cases. Use usual notations to label various energy levels.
In a p-i-n diode shown below, the doping concentration of p region is slightly larger than n' region and the wide i region is 1-11 undoped P+ N+ -X (a) Sketch the space-charge distribution (b) Sk...
In a p-i-n diode shown below, the doping concentration of p region is slightly larger than n' region and the wide i region is 1-11 undoped P+ N+ -X (a) Sketch the space-charge distribution (b) Sketch the electric field (c) Sketch the energy band diagram (d) Sketch IV characteristics in forward and reverse bias.
In a p-i-n diode shown below, the doping concentration of p region is slightly larger than n' region and the wide i region is 1-11 undoped...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
(x) [2 Marks] For the current components in a p - n junction diode at thermal...
(x) [2 Marks] For the current components in a p - n junction diode at thermal equilibrium (a) Electron diffusion current equals hole diffusion current; (b) All current components are equal to zero; (c) Electron diffusion current equals electron drift current; (d) The drift current components are equal to zero; (e) All of the above; (f) None of the above;
Draw an equilibrium band diagram for Si p-n junction and find contact potential? if energy between...
Draw an equilibrium band diagram for Si p-n junction and find contact potential? if energy between Fermi level and conduction band of n-type 97 meV and energy between Fermi level and valence band of p-type 67 meV ?
Consider a silicon pn step junction diode with NA-1x1018 cm3 and No 1x1017cm-3, maintained at T...
Consider a silicon pn step junction diode with NA-1x1018 cm3 and No 1x1017cm-3, maintained at T 300K. The minority carrier lifetimes in the p-side and n-side are τη-10-8 s and Tp-10-7 s, respectively. a) Calculate the minority carrier densities at the edges of the depletion region when the applied voltage (VA) is 0.6 V. of the junction, for the applied bias voltage of part (a) densities are equal in magnitude, for the applied voltage of part (a). b) Sketch the...
The parameters of a pn junction diode at 300K are listed in the following table, the...
The parameters of a pn junction diode at 300K are listed in the following table, the cross section area of the junction is 105 cm2 n region N10" cm Hu = 850 cm?/V-s p region t,e = 10-6 s ,1" 1250 cm2/V-s 11,-420 cm2/V-s 320 cm/V-s (a) Sketch a band diagram at equilibrium (b) Find the reserve saturation current (c) Find the ideal diode current with forward bias voltage at 0.5 V and 0.7 V, respectively. (d) Find the current...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
) With the aid of a diagram, explair the formation of the depletion region in a P-n junction diode in thermal equilibrium. State the equilibrium condition for the currents flowing across the junction. Draw the band diagram of a forward biased p-n junction diode. On the diagram sketch the variation of the conduction band edge energy Ec and the valence band edge energy Ey. Sketch the variation of the electric field and potential across the p-n junction. State the changes...
Problem 1. Given a n-p-n bipolar junction transistor, draw the energy band diagrams for (a) thermal equilibrium and (b) active bias cases. Use usual notations to label various energy levels.
In a p-i-n diode shown below, the doping concentration of p region is slightly larger than n' region and the wide i region is 1-11 undoped P+ N+ -X (a) Sketch the space-charge distribution (b) Sketch the electric field (c) Sketch the energy band diagram (d) Sketch IV characteristics in forward and reverse bias.
In a p-i-n diode shown below, the doping concentration of p region is slightly larger than n' region and the wide i region is 1-11 undoped...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
(x) [2 Marks] For the current components in a p - n junction diode at thermal equilibrium (a) Electron diffusion current equals hole diffusion current; (b) All current components are equal to zero; (c) Electron diffusion current equals electron drift current; (d) The drift current components are equal to zero; (e) All of the above; (f) None of the above;
Consider a silicon pn step junction diode with NA-1x1018 cm3 and No 1x1017cm-3, maintained at T 300K. The minority carrier lifetimes in the p-side and n-side are τη-10-8 s and Tp-10-7 s, respectively. a) Calculate the minority carrier densities at the edges of the depletion region when the applied voltage (VA) is 0.6 V. of the junction, for the applied bias voltage of part (a) densities are equal in magnitude, for the applied voltage of part (a). b) Sketch the...
The parameters of a pn junction diode at 300K are listed in the following table, the cross section area of the junction is 105 cm2 n region N10" cm Hu = 850 cm?/V-s p region t,e = 10-6 s ,1" 1250 cm2/V-s 11,-420 cm2/V-s 320 cm/V-s (a) Sketch a band diagram at equilibrium (b) Find the reserve saturation current (c) Find the ideal diode current with forward bias voltage at 0.5 V and 0.7 V, respectively. (d) Find the current...
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