Question

It is about our school's assginment. But i cannot understand and figure out how to solve it.. Seriously i need your help. Thank you.

Assignment: Consider a thin Si sample with two metallic contacts on each side. The structure is at room temperature in thermal equilibrium and the doping is ND1015 cm everywhere. The Schottky barrier height of both metal-semiconductor junctions is qpBn - 0.7 eV. For the following three situations,) calculate the electron and hole concentrations and the electric field at the center of the sample, (ii) sketch the corresponding energy band diagram throughout the structure, and () compute the built-in potential of each metal- semiconductor junction. (a) For a sample thickness of 5 um. (b) For a sample thickness of 1 um. (c) In the limit of a very thin sample.

Answer 1

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