![6. Table 6 shows a range of voltage values applied across a diode together with measurements of the corresponding value of current flowing through the diode. Use regression techniques to find the ideality factor of the diode and calculate the maximum error of a linear interpolation in the 0.9-1 V range compared to [2096] Table 6: Current as a function of voltage in a diode Voltage 0 0.1 0.0.3 0.4 0.5 0.60.7 0.8 0.91 Current 00 (mA) 0 0 0 0 0 0.07 0.93 12.01 159.19 NB: Equation of a diode: eV nkT exp- Where I is in milli-amperes, V is in Volts, n -ideality factor 6 Vot-1 lo = 1.00 × 10-9 mA kT](http://img.homeworklib.com/questions/43aeb580-74d0-11ea-85a9-4d9e3560298e.png?x-oss-process=image/resize,w_560)
Homework Answers
from regression technique value of ideality factor = 1.65
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6. Table 6 shows a range of voltage values applied across a diode together with measurements...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explai...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied...
Part A: I. Connect the circuit in Figure 5. Use a 1N4003 diode. VOMI measures diode...
Part A: I. Connect the circuit in Figure 5. Use a 1N4003 diode. VOMI measures diode current, and VOM2 measures its voltage. Starting at 0, increase Vs and take data for a plot of Va vs. Id and complete Table 1. The values here will typically be in millivolts (mV) and milliamps (mA). Va Vs (VDC) 0 0.25 0.5 1.0 1.5 2.0 2.5 3.0 6.0 9.0 12.0 15.0 18.0 20.0 VG = Us - IR R=2.2 K2 Vs = VD+...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os,...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os, is so large it may be neglected. 0) Calculate the open circuit voltage gain Av Yout/ Vis. i) The amplifier has a load of 10 k2. Determine the current gain Va. = 12 V 150k 4k3 Vout Vin 200k GND = 0 V Figure 4b a) State the name...
Answer 4 & 5 please! thank you! R values = Resistor value, R1 = 990 Ohms...
Answer 4 & 5 please! thank
you!
R values =
Resistor value, R1 = 990 Ohms
Resistor value, R2 = 2050 Ohms
4. Connect the 2nd resistor in parallel with the 1st
resistor and connect that combination to the battery.
Measure
the following:
The
current passing through the R1, I1 = ___0.0058____ A
The
current passing through the R2, I2 = ___0.0031____ A
The
current supplied by the battery, I = ___0.0092____ A
Calculate I1 + I2 =...
need ans for the following questions, the last 3 pages for more info. Questions: more info:...
need ans for the following questions, the last 3 pages for more
info.
Questions:
more info:
expermint e/m avr=1.71033*10^11
7 2 points of the following options, which conditions for V or I produce the largest radius of the electron beam path r? Hint: Use e/m= 2V (5/4)*aP/(Nuo Ir) Maximum land Maximum V O Maximum land Minimum V Minimum I and Maximum V Minimum I and Minimum V 8 2 points By what factor will change if the radius of the...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied...
Part A: I. Connect the circuit in Figure 5. Use a 1N4003 diode. VOMI measures diode current, and VOM2 measures its voltage. Starting at 0, increase Vs and take data for a plot of Va vs. Id and complete Table 1. The values here will typically be in millivolts (mV) and milliamps (mA). Va Vs (VDC) 0 0.25 0.5 1.0 1.5 2.0 2.5 3.0 6.0 9.0 12.0 15.0 18.0 20.0 VG = Us - IR R=2.2 K2 Vs = VD+...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os, is so large it may be neglected. 0) Calculate the open circuit voltage gain Av Yout/ Vis. i) The amplifier has a load of 10 k2. Determine the current gain Va. = 12 V 150k 4k3 Vout Vin 200k GND = 0 V Figure 4b a) State the name...
Answer 4 & 5 please! thank
you!
R values =
Resistor value, R1 = 990 Ohms
Resistor value, R2 = 2050 Ohms
4. Connect the 2nd resistor in parallel with the 1st
resistor and connect that combination to the battery.
Measure
the following:
The
current passing through the R1, I1 = ___0.0058____ A
The
current passing through the R2, I2 = ___0.0031____ A
The
current supplied by the battery, I = ___0.0092____ A
Calculate I1 + I2 =...
need ans for the following questions, the last 3 pages for more
info.
Questions:
more info:
expermint e/m avr=1.71033*10^11
7 2 points of the following options, which conditions for V or I produce the largest radius of the electron beam path r? Hint: Use e/m= 2V (5/4)*aP/(Nuo Ir) Maximum land Maximum V O Maximum land Minimum V Minimum I and Maximum V Minimum I and Minimum V 8 2 points By what factor will change if the radius of the...
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