Question

1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied at room temperature. Calculate the reverse saturation current of the diode. Assume that the ideality factor of the diode is 1. d Explain briefly how an n-channel enhancement metal oxide semiconductor field 2 effect transistor (MOSFET) operates

Answer 1

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