1. For the circuit shown below, assume B-50. Determine Vout, lg and Ic for (a) Voto-0.2V...
2) Consider the circuit below. Assume B=49 A/A, VBe=0.7V, VCEsat=0.2V. If the Collector current is Ic = 9.8 mA, Find Vc, VE, VB and VBB; as well as the currents IE and IB. Hint: VBB>0. Verify your assumption. 15V V BB ic 3 Rc CS 30622 AVC RB 10k 2 B E → VE ięRE ES 33012
DC Biasing For the circuit below, assume 150, VBE(ON) -0.7V and Vce(SAT)- 0.2V Voc 10 VO Rc 3.3K ib Rb 330K Write an equation for ib in terms of Vin (Hint: use KVL from VBB to ground) Write the general equation for ic in terms of ib and P Write an equation for Vce in terms of ic CE- Fill the table Operational Region 0 V 3 V 5 V 7 V
+ 10 V IRL 100 k2 VBB sv 51. 2 Cnsider the circuit shown to the right. Assume Poc 100. (40 points) (a) Let Vsa 5 V, determine lB, lc lE, IRL and VcE in the circuit. (b) What minimum value of VBB is required to saturate this transistor? Assume Vedsat) = 0 V and ic-. 3) Assume Poc 50, VCElsat) 0 V and Icicutof) 0 A. (30 points) (a) Plot the load line for this circuit (b) Let VaB...
Problem 5 Given the following circuit, assume the following parameters VBB IV, RB 220 k, RC = 2 k, VCC= 10 V, VBE(on)-0.7 V, and B 200 a) Calculate the base, collector, and emitter currents and the C-E voltage, also, calculate the transistor power dissipation b) What transistor configuration does the circuit resemble? Vcc=10V RC=2k Rg=220 kQ VCE VBB= 1V o + VRE IB
answer i-iv please The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
Problem 4 (20 %) For the circuit shown in Figure 4 determine IB, IC, and VC. Data VCC=9 V VBB=4 V R2= 165 k R1= 2.5 k Transistor Assume VBE ≈ 0.7 V and =150 Derive all the results. Give the answers with the preestablished prefix. FAVOR DIBUJAR LOS CIRCUITOS Problem 4 (206) For the circuit shown in Figure 4 determine IB, I, and Vc. Data Ve=9 V V=4V R = 165 kg R=2.5k_2 Transistor Assume VE 0.7 V and...
2 of 2 3. In the circuit shown at the right the Zener diode has the properties given at the bottom of the figure R2 25 ohm R1 VBB 20 ohm D 30 V a) Determine the power dissipated in the Zener P- 10 W Vzz=10V b) Repeat (a) if R, is removed from the circuit
4. Assume Vcc-15V, Ra 20KQ, Rc-2ΚΩ, Vae* 0.7V and VCESA,-0.1V for the circuit given below. Given Vi points), and (5 points),region of operation. Find ls (5 points), Ic (5 points) and Vi (5 points) for when the a. 0.9V and /C-3mA, find IB (5 points), ß (5 points), Vout. (5 b. transistor becomes saturated Rc Rb VoutVcc in
Fig. 3 as follows is an IC layout of a CMOS implementation of a two-input digital logic gate. The truth table of the logic gate is also given. Voo Vini Vina Vout OVOV 3 V OV 3V 3 V Vint Vina out 3V10 V 3V 3V 3V OV GND Fig. 3 (a). How many MOSFETs are there in the IC layout shown above? (2 marks) (b). The given layout is drawn according to the lambda () design rules. If a...
Please answer clearly Determine voltage characteristics (Vout/V) of the circuit shown in Figure 1. Assume: a) Diodes D1 and D2 are ideal. b) Zener diode has r2-0 with the break down voltage of Vz-12 V. 1ΚΩ D1 D2 추 R2 1ΚΩ Vout Figure 1