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5)

5. This problem is composed of several short qualitative questions. (a) Is it possible for the contact potential Vo of a junction to exceed the band gap Eg (eV)? (b) Sketch the band diagram, including the quasi-Fermi levels Fn and Fp, throughout a uniformly illuminated diode under open-circuit conditions. (c) Assuming that a GaAs junction is doped to equal concentrations on the n and p sides, would you expect electron or hole injection to dominate in forward bias? Explain.

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