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5) 5. This problem is composed of several short qualitative questions. (a) Is it possible for...
A Si sample is doped with NA = 5 x 1015cm 3 and optical excited uniformly with gop-1019EHP/cm3,s. As suming T-300K and using carrier lifetime τη-tp-5us and diffusion coefficient D,-35cm2/s and D,- 12.5cm2Is) (a). Find the steady state electron and hole concentrations (n and p) and the separation of their quasi-Fermi levels (Fn Fp). (b). Calculate the of conductivity, σ, of the Si upon illuminating the light
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...