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1.) [20 points] The parameters of n-channel enhancement MOSFET in the amplifier circuit below are Ve = 2.4 V, Kn = 2.042 mA/V

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n042 mAv Do PD Os SR RG .3으으ド) 4.SV ) (300) d4n satunation egion e sp (sxtr) 6-116(vas-2.4) 45-vc, s - 4.636า ± 21.4989-20.1016 VSs, So, Ive, s 2-10138 vsp D tt.5-2-90138 (3x10) VDS= 10.76V >그 VGs 63 9m208 03 mAlv Ip 653X103smatl Jigmal model (ac- analhi) 2s Rs open cinut Cument division) 03mv3s (n.eter) 0 lo S _ (2-0883 x (o)) ((2 8 3.oi) (4-76)) 지o3 Au。_ (287.m)9s レ vs.is (Pst Rc.) 2 (Meik ei] タ 9,738 v, し , 一9-738

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