Homework Answers
The charge 
Q in response to
V is added in the region of uncovered charge on either side of PN
junction which is the depletion region.
Voltage tunable capacitance CT = K/(VT + Vr)n
Where: K is constant determined by semiconductor doping
VT is knee or barrier potential
Vr is magnitude of applied reverse bias potential
n is 1/2 for alloy junctions and 1/3 for diffused junctions
Voltage tunable capacitor is used in LC tuned circuit.
The resonant frequency of this circuit depends on tunable capacitance.
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3) Consider a reverse biased PN junction. Let the applied bias change from Vj to Vp...
The correct answer is: 5769 If the DC bias voltage, Vd, across a reverse biased PN...
The correct answer is: 5769 If the DC bias voltage, Vd, across a reverse biased PN step junction is equal to -2.9V then what is the capacitance of this junction in femto Farads? Assume that CjO for the junction is equal to 992.3 fF. (Note that 1 fF 1 femto Farad 1 x 10A-15 F.) Also assume that the built-in voltage for this junction is equal to 777mV. Answer The correct answer is: 456.1
THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is...
THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is 10^17 cm^-3, Nd = 10^16 cm^-3, ni = 1.3 x 10^9 cm^-3, temperature T = 273 k find the width of depletion region with the applied reverse voltage please check your answer that it is correct please it is a humble request
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A pl...
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A plot of 1/C2 vs. the applied voltage Va is shown. The dashed line is extrapolated, continuing the data with a constant slope. From the junction capacitance formula and the dependence of W on Vbi-VA, one can obtain an equation for 1/C (a) If the diode is a one-sided junction, find the doping density on the low side from the measured (estimate...
please answer 7.17, i put 7.10 for reference. Consider a uniformly doped silicon pn junction with...
please answer 7.17, i put 7.10 for reference.
Consider a uniformly doped silicon pn junction with doping concentrations N 2 x 7.10 = 1017 cm3and N = 4 X 1016 cm3. (a) Determine Vhi at T = 300 K. (b) Determine the temperature at which Vhi increases by 2 percent. (Trial and error may have to be used.) 7.17 Consider the pn junction described in Problem 7.10 for T = 300 K. The cross- sectional area of the junction is...
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3....
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3. The junction cross-sectional area is A 103 cm2 and the applied forward-bias voltage is Va 1.10 V. Calculate the (a) minority electron diffusion cur rent at the edge of the space charge region, (b) minority hole diffusion current at the edge of the space charge region, and (c) total current in the pn junction diode.
p-side remain unchanged. 3. Consider a long silicon pn junction photodiode at T-300 K with the...
p-side remain unchanged. 3. Consider a long silicon pn junction photodiode at T-300 K with the following parameters :N, 2x1016 cm-3,Nd-2x1 O18 cm's D,-25 crnVs, D,-10 cm?/sMr-2x10 po-10's. Assume a reverse bias voltage of VR-5 V is applied and assume a uniform generation rate of GL-1021 cm's-1 exists throughout the entire photodiode. Calculate the ratio of the prompt photocurrent density to the total steady state photocurrent density
The correct answer is: 5769 If the DC bias voltage, Vd, across a reverse biased PN step junction is equal to -2.9V then what is the capacitance of this junction in femto Farads? Assume that CjO for the junction is equal to 992.3 fF. (Note that 1 fF 1 femto Farad 1 x 10A-15 F.) Also assume that the built-in voltage for this junction is equal to 777mV. Answer The correct answer is: 456.1
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A plot of 1/C2 vs. the applied voltage Va is shown. The dashed line is extrapolated, continuing the data with a constant slope. From the junction capacitance formula and the dependence of W on Vbi-VA, one can obtain an equation for 1/C (a) If the diode is a one-sided junction, find the doping density on the low side from the measured (estimate...
please answer 7.17, i put 7.10 for reference.
Consider a uniformly doped silicon pn junction with doping concentrations N 2 x 7.10 = 1017 cm3and N = 4 X 1016 cm3. (a) Determine Vhi at T = 300 K. (b) Determine the temperature at which Vhi increases by 2 percent. (Trial and error may have to be used.) 7.17 Consider the pn junction described in Problem 7.10 for T = 300 K. The cross- sectional area of the junction is...
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3. The junction cross-sectional area is A 103 cm2 and the applied forward-bias voltage is Va 1.10 V. Calculate the (a) minority electron diffusion cur rent at the edge of the space charge region, (b) minority hole diffusion current at the edge of the space charge region, and (c) total current in the pn junction diode.
p-side remain unchanged. 3. Consider a long silicon pn junction photodiode at T-300 K with the following parameters :N, 2x1016 cm-3,Nd-2x1 O18 cm's D,-25 crnVs, D,-10 cm?/sMr-2x10 po-10's. Assume a reverse bias voltage of VR-5 V is applied and assume a uniform generation rate of GL-1021 cm's-1 exists throughout the entire photodiode. Calculate the ratio of the prompt photocurrent density to the total steady state photocurrent density
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