ZuoTi.Pro
Question

The correct answer is: 5769 If the DC bias voltage, Vd, across a reverse biased PN step junction is equal to -2.9V then what is the capacitance of this junction in femto Farads? Assume that CjO for the junction is equal to 992.3 fF. (Note that 1 fF 1 femto Farad 1 x 10A-15 F.) Also assume that the built-in voltage for this junction is equal to 777mV. Answer The correct answer is: 456.1

engineering   Electrical-Engineering   
0 0
Add a comment Improve this question Transcribed image text
Next > < Previous
Sort answers by oldest

Homework Answers

Answer #1

0 0
Add a comment
Know the answer?
Add Answer to:
The correct answer is: 5769 If the DC bias voltage, Vd, across a reverse biased PN...
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Log In

Sign Up

Not the answer you're looking for? Ask your own homework help question. Our experts will answer your question WITHIN MINUTES for Free.
Similar Homework Help Questions

  • 3) Consider a reverse biased PN junction. Let the applied bias change from Vj to Vp...

    3) Consider a reverse biased PN junction. Let the applied bias change from Vj to Vp + SV. Where is the charge 8Q added in response to SV? What is the formula for this voltage tunable capacitance in terms of the PN junction parameters (doping, built-in voltage, applied voltage etc)? Discuss one application of this voltage tunable capacitor.

  • THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is...

    THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is 10^17 cm^-3, Nd = 10^16 cm^-3, ni = 1.3 x 10^9 cm^-3, temperature T = 273 k find the width of depletion region with the applied reverse voltage please check your answer that it is correct please it is a humble request

  • 2. Calculate the reverse breakdown voltage for a pn junction with Nd=1e19 and Na=2.75e16. 5. A...

    2. Calculate the reverse breakdown voltage for a pn junction with Nd=1e19 and Na=2.75e16. 5. A diode is used to rectify an ac voltage from a transformer and charge a 1uF capacitor. Estimate how long it will take the capacitor to discharge from 3 volts to 1.5 volts (once ac voltage is turned off) a) with no load b) with a scope probe across the capacitor. (note: never is not the correct answer)

  • Please answer question 2 part c 2. The following table is the reverse bias capacitance of...

    Please answer question 2 part c 2. The following table is the reverse bias capacitance of a p+-n step junction diode. If the area of the diode is 1 x 10-2cmand the semiconductor is uniformly doped, calculate the following assuming the relative dielectric constant of the semiconductor is Ks = 10, E = 8.854 x 10-14 F/cm, 1pF=10-12F, and the plot of +2 versus V is straight line. Voltage (V) Capacitance (PF) 420 344 298 266 243 5 - (a)...

  • 1. Draw the schematics of forward-biased and negative-biased diodes. Show the polarity of voltage source (positive...

    1. Draw the schematics of forward-biased and negative-biased diodes. Show the polarity of voltage source (positive and negative terminal of the source), the position of Fermi levels and the current direction. Explain why there is a small current flow when a p-n junction is under reverse bias. 2. A p-n junction can be made by diffusing acceptor atoms into an n-type semiconductor. Suppose that boron is diffused into a silicon wafer doped with arsenic at 1015 cm-3 such that the...

  • Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in...

    XXX is 467 Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...

  • Ctri Question 3 (20 Marks) Lab 1-Zener Circuits and Applications Theory: Zener diode is designed ...

    Ctri Question 3 (20 Marks) Lab 1-Zener Circuits and Applications Theory: Zener diode is designed to operate in reverse conduction. Zener breakdown occurs at a precisely defined voltage, allowing the diode to be used as a voltage reference or clipper. While Zener diodes are usually operated in reverse conduction, they may also be operated in cutoff and forward conduction. There are two different effects that are used in "Zener diodes". The only practical difference is that the two types have...

  • you can say me just correct answer I don't need any step by step solution 23/5/2019...

    you can say me just correct answer I don't need any step by step solution 23/5/2019 Final 2019 - 5 shown 2 Q21Consider the silicon Sample with the impurity doping profile that widiths of neutral regions are much greater than di Husion lengthe A corriers. al calculate the built in voltage between region 1 and 2, Zand 3 and Land 3 for Zero bios condition Il region 13 ad region 2nd region bil calowate the excess carrier concentration for a...

  • Problem #1 (Concepts) Circle the correct answer or fill in the blank. (3 points each) a)...

    Problem #1 (Concepts) Circle the correct answer or fill in the blank. (3 points each) a) Kirchhoffs "law" is a consequence of (conservation of charge conservation of energy both none) b) What is the time constant of the circuit shown below? Each of the five resistors has a resistance R, and each of the five capacitors has capacitance C. The internal resistance of the battery is negligible. (RC 5RC 10RC25RC) vünün = = = AV c) A power supply will...

  • Problem 3: Design Problem On Figure P3a, you have a Common Source (CS) n-channel MOSFET amplifier....

    Problem 3: Design Problem On Figure P3a, you have a Common Source (CS) n-channel MOSFET amplifier. Notice the absence of a source resistor Rsig and load resistor R. If we know how the present amplifier (the one on Figure P3a) behaves without Rsig and RL, we can infer its behaviors if Rsig and R were to be added. design the amplifier circuit on Figure P3a, i.e., you have to find appropriate values for RGj You are to RG,, RD, and...

ADVERTISEMENT
Free Homework Help App
Download From Google Play
Scan Your Homework
to Get Instant Free Answers
Need Online Homework Help?
Ask a Question
Get Answers For Free
Most questions answered within 3 hours.
ADVERTISEMENT
ADVERTISEMENT
ADVERTISEMENT