2. Calculate the reverse breakdown voltage for a pn junction with Nd=1e19 and Na=2.75e16.
5. A diode is used to rectify an ac voltage from a transformer and charge a 1uF capacitor. Estimate how long it will take the capacitor to discharge from 3 volts to 1.5 volts (once ac voltage is turned off) a) with no load b) with a scope probe across the capacitor. (note: never is not the correct answer)
2. Calculate the reverse breakdown voltage for a pn junction with Nd=1e19 and Na=2.75e16. 5. A...
THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is 10^17 cm^-3, Nd = 10^16 cm^-3, ni = 1.3 x 10^9 cm^-3, temperature T = 273 k find the width of depletion region with the applied reverse voltage please check your answer that it is correct please it is a humble request
Give a physical interpretation to the phenomenon that the (small) reverse current of a pn-junction diode does not increase when the reverse-bias voltage increases (before reaching the breakdown voltage).
consider a silicon pn junction diode at 300 K with nd= na = 10^16 cm-3, u_n 1350 cm^2/v-s, u_p 480 cm^2/v-s, and t_no = t_po= 5×10^-7 s. consider two bias conditions: i) a reverse bias of 1.0 v ii) a forward bias of 0.2 v a) for each bus condition, roughly sketch the band gap diagram - accurately label the energy gap in eV - indicate the difference between E_f on the two sides id the junction and label its...
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A plot of 1/C2 vs. the applied voltage Va is shown. The dashed line is extrapolated, continuing the data with a constant slope. From the junction capacitance formula and the dependence of W on Vbi-VA, one can obtain an equation for 1/C (a) If the diode is a one-sided junction, find the doping density on the low side from the measured (estimate...
2. (60 pts) Consider a one-sided silicon PN diode. The p-side is degenerately doped (and you can assume Ep = Ey for simplicity). The doping concentration on the n-side is Np for 0<x <too. The depletion width on the n-side is xn. Use the depletion approximation. p* ND x 0 From here, you assume that Np is given by 4x1015 cm. (h) (7 pts) What is the maximum electric field in depletion region when Va=-3 V? (i) (8 pts) As...
Design a FULL WAVE BRIDGE RECTIFIER circuit that will: Take 120volts ac, 60 hz, sinusoidal waveform from the wall power and convert it to a “regulated” dc value giving 15 volts +, - 1.0 volts across a 1200-ohm output load resistor with no more than 2% ripple voltage, all at a total component parts cost of less than $175.00 (US$). Your design process/ analysis is to be conducted by hand. Consider for this design task: Assume an ideal transformer and...
Question 4. (a) A full-wave bridge rectifier power supply is powered from the secondary of a transformer which has a rms secondary voltage of 15.6V. The primary of the transformer is connected to a 50Hz, 230VRMS power supply. A 2700uF filter capacitor is used. A current of 1.5 Amp is drawn from the supply. (i) Sketch a schematic diagram of the setup. (ii) Calculate the mean de output voltage. Assume each power diode has a forward voltage drop of 1...
summatize the following info and break them into differeng key points. write them in yojr own words apartus 6.1 Introduction—The design of a successful hot box appa- ratus is influenced by many factors. Before beginning the design of an apparatus meeting this standard, the designer shall review the discussion on the limitations and accuracy, Section 13, discussions of the energy flows in a hot box, Annex A2, the metering box wall loss flow, Annex A3, and flanking loss, Annex...