Question

9.2. Consider an As (arsenic) substitutional impurity in a Si crystal. From Fig. 8.6 we see that an electron bound to this atom has an energy of Ec-0.054 eV. Using the simple Fermi-Dirac distribution function of (9.6) to calculate the probability that an electron is in the bound state of this atom if the Fermi level EF is located at: (a) Ef = Ec - 0.200 eV, (b) Ep = Ec - 0.100 eV, (c) Ep = Ec, (d) Ep = EC + 0.100 eV,

Answer 1

Any Fermi - Dirac F(E)= distribution function 1 te (E-EF JIKT Ega fermi energy level K 2 Boltzmann constant T2 Temperature at room temperature (3ook) KT = 0.0259 ev a Ez Ec-0.0541U EF = EC -0.2 eV PCE)= it (@c-0.054) ffc-0.2]]/0.0259 - 0.003551

,to Ec- 0.054 e b, Gr= Ec-oil ev f(E)= It (E-0.054)-(E6-0.153/0.0259 2 0.14479 EF = Ec ev , G E2 E(-0.054 eu f(E)= 20:54)-6] (0.0259 d, G = Ect Olev, E2 EE-0.054 eu LLE) = 1+ CEC-0.054) - CEC to 1)] 10.0259 - 0.99739