In the given circuit, VCC, Rc, Rb was given. We have first marked the current in each resistors as shown in the solution. Concept of Kirchoff's current law is used that is (IB+IC)(current in Rc which flows towards point A) = IB(current in Rb which flows away from point A)+ IC( current in collector of transistor which flows away from point A).
Generally silicon transistor is used and voltage between base and emitter of silicon transistor i.e Vbe is approximately 0.7 (Vbe=0.7 V)
1) To calculate IB current, we have applied KVL in base -emitter loop. Thus we get, IB= 2.21 uA or 2.21*10(-6).
2) To calculate IC current, we assumed transistor to be in active region. For active region IC = (beta) * (IB). Where beta is 200 (given in question). Thus we get, IC = 0.442 mA Or 0.442 * 10(-3) A.
3) Similarly for VCE voltage, we have applied KVL in collector -emitter loop. Thus we get, VCE = 2.91 V
4) As we have assumed active region so the condition of active region are VBE to be positive voltage and VCE to be greater than VBE.
From the above calculations we satisfy both the conditions of active region, our assumption is correct and thethe given transistor is in active region.
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