semiconductor physics, GaAs bar question
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semiconductor physics, GaAs bar question
can some please help me with this one? it's from the "Advanced semiconductor fundamentals" book by robert f pierret.44f.JPG
semiconductor physics
can someone help me with this one please?
The resistivity in an n-type GaAs semiconductor at T = 300 K is ρ = 2...
The resistivity in an n-type GaAs semiconductor at T = 300 K is ρ = 2 Ω-cm. Determine the thermal-equilibrium values of electron and hole concentration. Question 7 options: a) no = 3.67 X 1014 cm-3 po = 8.83 X 10-3 cm-3 b) po = 3.25 X 1015 cm-3 no = 6.92 X 104 cm-3 c) po = 6.92 X 1015 cm-3 no = 3.25 X 104 cm-3 d) no = 8.83 X 1014 cm-3 po = 3.67 X 10-3...
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and...
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and No 0. The GaAs is illuminated with a light source at t = 0 s, resulting in a uniform generation rate of electron hole pairs g' 1020 cm . The electric field is zero. a) Give the analytic expression for the excess-carrier concentration δn(t) versus the time t>0s b) The steady state excess carrier concentration is found to be on( is the minority carrier...
A “thin” slab (thickness d << 1/α, where α is the absorption coefficient) of GaAs semiconductor...
A “thin” slab (thickness d << 1/α, where α is the absorption coefficient) of GaAs semiconductor at T = 300 K is uniformly doped with NA = 1016 cm-3 and ND = 0. The GaAs is illuminated with a light source at t = 0 s, resulting in a uniform generation rate of electron hole pairs g’ = 1020 cm-3s-1 through-out the slab of GaAs. The electric field is zero. a) Give the analytic expression for the excess-carrier concentration δn(t)...
I. [5%) A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon...
I. [5%) A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenide sites in the GaAs crystal. Which ONE of the following statements is true? A. Silicon atoms act as p-type dopants in Arsenic B. Silicon atoms act as n-type dopants in Arsenic C. Silicon atoms act as p-type dopants in Arsenic D. Silicon atoms act as n-type dopants in Arsenic sites and n-type dopants in Gallium sites sites and p-type...
4) Gallium arsenide (GaAs) is a semiconductor material of great interest for its high power-handling capabilities...
4) Gallium arsenide (GaAs) is a semiconductor material of great interest for its high power-handling capabilities and fast response time. (a) Calculate the drift speed of electrons in GaAs for a field of 10 V/cm if the electron mobility is un = 8500 cm2/Vs. (b) What percent of the electron's thermal speed at 300 K is this drift speed? (c) Assuming an effective electron mass equal to the free electron mass, calculate the average time between electron collisions. (d) Calculate...
Problem #11) Please answer to the following questions: Semiconductor materials like Si and GaAs have electron-hole...
Problem #11) Please answer to the following questions: Semiconductor materials like Si and GaAs have electron-hole pairs as their intrinsic point defects. Using bonding as the starting point briefly explain why these materials don't have vacancies like metals or Schottky or Frenkel defects like ionic ceramics, as their primary intrinsic point defects.
Semiconductor Physics: A semiconductor has a intrinsic concentration of 1010 cm-3 and has donor impurity concentration o...
Semiconductor Physics: A semiconductor has a intrinsic concentration of 1010 cm-3 and has donor impurity concentration of 1015 cm-3. Light is shined (uniformly) upon the sample generating 5*1019 electron-hole pairs.cm-3s-1 with a minority carrier lifetime of 10-6 s. What is the net electron-hole recombination rate? I think at steady state, the electron-hole recombination rate is the same as the generation rate. But the current circumstances of the question make me doubt that assumption or conclusion (the question is 4 marks).
Physics question. Suppose that a bar magnet falls through a conducting hoop of wire with its...
Physics question.
Suppose that a bar magnet falls through a conducting hoop of wire with its north pole facting downward. Three consecutive snapshots of its descent are shown below. For each snapshot, state whether: the magnetic flux through the loop is upward, downward, or zero; the induced current is clockwise, counterclockwise, or zero, from the point of view of an observer looking down from above the loop. Make a qualitative sketch of the induced current versus time (taking counterclockwise as...
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and No 0. The GaAs is illuminated with a light source at t = 0 s, resulting in a uniform generation rate of electron hole pairs g' 1020 cm . The electric field is zero. a) Give the analytic expression for the excess-carrier concentration δn(t) versus the time t>0s b) The steady state excess carrier concentration is found to be on( is the minority carrier...
I. [5%) A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenide sites in the GaAs crystal. Which ONE of the following statements is true? A. Silicon atoms act as p-type dopants in Arsenic B. Silicon atoms act as n-type dopants in Arsenic C. Silicon atoms act as p-type dopants in Arsenic D. Silicon atoms act as n-type dopants in Arsenic sites and n-type dopants in Gallium sites sites and p-type...
4) Gallium arsenide (GaAs) is a semiconductor material of great interest for its high power-handling capabilities and fast response time. (a) Calculate the drift speed of electrons in GaAs for a field of 10 V/cm if the electron mobility is un = 8500 cm2/Vs. (b) What percent of the electron's thermal speed at 300 K is this drift speed? (c) Assuming an effective electron mass equal to the free electron mass, calculate the average time between electron collisions. (d) Calculate...
Problem #11) Please answer to the following questions: Semiconductor materials like Si and GaAs have electron-hole pairs as their intrinsic point defects. Using bonding as the starting point briefly explain why these materials don't have vacancies like metals or Schottky or Frenkel defects like ionic ceramics, as their primary intrinsic point defects.
Physics question.
Suppose that a bar magnet falls through a conducting hoop of wire with its north pole facting downward. Three consecutive snapshots of its descent are shown below. For each snapshot, state whether: the magnetic flux through the loop is upward, downward, or zero; the induced current is clockwise, counterclockwise, or zero, from the point of view of an observer looking down from above the loop. Make a qualitative sketch of the induced current versus time (taking counterclockwise as...
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