Homework Answers
At the point when GaAs is doped with Silicon, the two conceivable outcomes are possible,
i) Silicon can supplant Gallium
(ii) Silicon can supplant Arsenic So, on the off chance that the Silicon replaces Gallium,
Silicon has one more electron. In this way, the additional electron is accessible for conduction. It will make it n-type.
finally, Silicon replaces Arsenic it has one less electron and it will make it p-type.
so answer is " A " is correct
that is,
(A) Silicon atoms act as p-type dopants in Arsenic sites and n-type dopants in Gallium sites
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I. [5%) A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon...
1. (a) Calculate the value of ni for gallium arsenide (GaAs) at T = 300 K....
1. (a) Calculate the value of ni for gallium arsenide (GaAs) at T = 300 K. The constant B = 3.56 × 1014cm−3K 3/2 and the bandgap voltage Eg = 1.42 eV. [5 marks] (b) In a phosphorus-doped silicon layer with impurity concentration of 1017/cm3 , find the hole and electron concentrations at 27oC and 125oC [5 marks] 2. A young designer, aiming to develop intuition concerning conducting paths within an integrated circuit, examines the end-to-end resistance of a connecting...
6. (a) Calculate the density of GaAs (the lattice constant of GaAs is 5.65 Å, and...
6. (a) Calculate the density of GaAs (the lattice constant of GaAs is 5.65 Å, and the atomic weights of Ga and As are 69.72 and 74.92 g/mol, respectively). (b) A gallium arsenide sample is doped with tin. If the tin displaces gallium atoms in crystal lattice, are donors or acceptors formed? Why? Is the semiconductorn- or p-type?
Ap-type material can be made if pure germanium is doped with Silicon Arsenic Gallium Carbon Which...
Ap-type material can be made if pure germanium is doped with Silicon Arsenic Gallium Carbon Which of these materials provides an example of an ionic crystalline solid? SIC SrCl2 C60 Which of the followings statements is true of dipole-dipole interactions? They are stronger than dispersion forces. They are also referred to as London forces. They are also referred to as instantaneous dipole-induced dipole forces. They are based on transient dipoles. Which pair of atoms is most likely to be involved...
Silicon (4 valence electrons) can be doped with arsenic (5 valence electrons) to make an n-type...
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3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels...
3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels and have the properties listed below. Case 1: Case 2: Case 3: Case 4: Ex-Ey = 0.15 eV Ef-Ey=0.88 eV EF-Ey = 0.55 eV Ex-Ey = 1.09 eV The four cases above show the position of the Fermi Level Er relative to the valence band edge Ev.at dilterent doping levels. a) identify each sample as degenerate and nondegenerate. b) which nondegenerate case shows heavy...
Problem 2. Silicon is used to dope a crystal of InP to a doping concentration of...
Problem 2. Silicon is used to dope a crystal of InP to a doping concentration of 2.5x10^16/cm3. Assume that all the silicon atoms displace only P atoms in the InP crystal. This is an example of “amphoteric” doping. (a) Explain amphoteric doping, and why it is important I specify which type of atoms in an InP crystal is replaced by the Si atoms that are used for doping. (b) In this situation, state if the doped InP is n-type or...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
A piece of p-type GaAs is doped with a net impurity concentration of N Na-5 × 1018 m-3. Is it deg...
A piece of p-type GaAs is doped with a net impurity concentration of N Na-5 × 1018 m-3. Is it degenerate or nondegenerate? Find its electron and hole concentrations and its Fermi level at 300 K. How much is the shift of the Fermi level, measured from the intrinsic Fermi level, caused by the doping of the impurity? Compare the results obtained in this problem for the p-type GaAs with those found in Example 12.3 for the n-type GaAs of...
Quantum confinement becomes important at small dimensions. In one dimension, quantum confinement ...
Quantum confinement becomes important at small dimensions. In one dimension, quantum confinement becomes important at Δx = (h^2/m*kBT)1/2 where m* is either the mass of the electron or mass of the hole. (a) Calculate the dimension at which quantum confinement becomes significant for n-type and p-type gallium arsenide at 300 K. (b) How many layers are needed for quantum confinement of electrons or holes? Information you might want to use: Gallium arsenide has an electron effective mass of 0.067 me...
Sketch the atomic structure of copper and discuss why it is a good conductor and how its structure is different from that of germanium, silicon, and gallium arsenide.
.1. Sketch the atomic structure of copper and discuss why it is a good conductor and how its structure is different from that of germanium, silicon, and gallium arsenide. 2. Determine the thermal voltage for a diode at a temperature of 20°C. 3. Given a diode current of 6 mA, Vr= 26 mV, n= 1, and Is= 1 nA, find the applied voltage VD. 4. Compare the characteristics of a silicon and a germanium diode and determine which you would prefer to use...
6. (a) Calculate the density of GaAs (the lattice constant of GaAs is 5.65 Å, and the atomic weights of Ga and As are 69.72 and 74.92 g/mol, respectively). (b) A gallium arsenide sample is doped with tin. If the tin displaces gallium atoms in crystal lattice, are donors or acceptors formed? Why? Is the semiconductorn- or p-type?
Ap-type material can be made if pure germanium is doped with Silicon Arsenic Gallium Carbon Which of these materials provides an example of an ionic crystalline solid? SIC SrCl2 C60 Which of the followings statements is true of dipole-dipole interactions? They are stronger than dispersion forces. They are also referred to as London forces. They are also referred to as instantaneous dipole-induced dipole forces. They are based on transient dipoles. Which pair of atoms is most likely to be involved...
3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels and have the properties listed below. Case 1: Case 2: Case 3: Case 4: Ex-Ey = 0.15 eV Ef-Ey=0.88 eV EF-Ey = 0.55 eV Ex-Ey = 1.09 eV The four cases above show the position of the Fermi Level Er relative to the valence band edge Ev.at dilterent doping levels. a) identify each sample as degenerate and nondegenerate. b) which nondegenerate case shows heavy...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
A piece of p-type GaAs is doped with a net impurity concentration of N Na-5 × 1018 m-3. Is it degenerate or nondegenerate? Find its electron and hole concentrations and its Fermi level at 300 K. How much is the shift of the Fermi level, measured from the intrinsic Fermi level, caused by the doping of the impurity? Compare the results obtained in this problem for the p-type GaAs with those found in Example 12.3 for the n-type GaAs of...
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