Quantum confinement becomes important at small dimensions. In one dimension, quantum confinement ...
Quantum confinement becomes important at small dimensions. In one dimension, quantum confinement becomes important at Δx = (h^2/m*kBT)1/2 where m* is either the mass of the electron or mass of the hole.
(a) Calculate the dimension at which quantum confinement becomes significant for n-type and p-type gallium arsenide at 300 K.
(b) How many layers are needed for quantum confinement of electrons or holes?
Information you might want to use: Gallium arsenide has an electron effective mass of 0.067 me and a hole effective mass of 0.082 me. The crystal structure of gallium arsenide consists of layers of GaAs each 0.327 nm in thickness.
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Quantum confinement becomes important at small dimensions. In one dimension, quantum confinement ...
2. (a) Assuming Anderson's rule and Vegard's law calculate the depth of the confining potential in meV, for holes in the valence band of a InAs/InxGa1-xAs multi QW structure where x-0.5. [5]...
2. (a) Assuming Anderson's rule and Vegard's law calculate the depth of the confining potential in meV, for holes in the valence band of a InAs/InxGa1-xAs multi QW structure where x-0.5. [5] State whether electron and hole confinement is within the InAs or InGaAs layers, and hence deduce what type of structure/band alignment this is. Suggest why this structure might be difficult to grow experimentally. (b) A Gao.47lno.53As quantum well laser is designed to emit at 1.55um at room temperature...
Special Problem (20 pts) Consider an undoped AljGa7As/GaAs/ Al3Ga7As quantum well (QW) of width W...
Special Problem (20 pts) Consider an undoped AljGa7As/GaAs/ Al3Ga7As quantum well (QW) of width W-15 nm. (a) Due the quantum mechanical confinement in the quantum well, the lowest energy states of in the conduction band is no longer the conduction band edge, but the CB edge plus the confined state energy (particle in the box problem), where the confinement energy relative to the CB edge is given by the solutions for infinite barriers where n-1,2,.is the quantum number, n-1 is...
**Please Show All The Steps** As I mentioned in the class assume that we have a...
**Please Show All The Steps**
As I mentioned in the class assume that we have a GaAs (Gallium
Arsenide) sample which was doped with excessive As to produce a
resistivity of 0.05 Ωm. Owing to the presence of an unknown
acceptor impurity the actual resistivity was 0.06Ωm, the sample
remaining n-type. What were the concentrations of donors and
acceptors present?
(Please take μe=0.85 m2/Vs and assume that all impurity atoms
are ionized)
PHYSICAL CONSTANTS Avagadro's Number NA- 6.02 x 10*23...
4. (a) The energy states of Landau levels are given by where wc is the cyclotron frequency Using ...
4. (a) The energy states of Landau levels are given by where wc is the cyclotron frequency Using this and the 2D density of states given by where m is the carrier effective mass, deduce the degeneracy of a Landau Level Sketch these Landau levels on a graph of number n(E) verses energy (E), and indicate the position of the Fermi Energy for a filling factor of 8 4 (b) Sketch the band diagram for a heterojunction between p-type AlGaAs...
summatize the following info and break them into differeng key points. write them in yojr own...
summatize the following info and break them into differeng key points. write them in yojr own words
apartus
6.1 Introduction—The design of a successful hot box appa- ratus is influenced by many factors. Before beginning the design of an apparatus meeting this standard, the designer shall review the discussion on the limitations and accuracy, Section 13, discussions of the energy flows in a hot box, Annex A2, the metering box wall loss flow, Annex A3, and flanking loss, Annex...
2. (a) Assuming Anderson's rule and Vegard's law calculate the depth of the confining potential in meV, for holes in the valence band of a InAs/InxGa1-xAs multi QW structure where x-0.5. [5] State whether electron and hole confinement is within the InAs or InGaAs layers, and hence deduce what type of structure/band alignment this is. Suggest why this structure might be difficult to grow experimentally. (b) A Gao.47lno.53As quantum well laser is designed to emit at 1.55um at room temperature...
Special Problem (20 pts) Consider an undoped AljGa7As/GaAs/ Al3Ga7As quantum well (QW) of width W-15 nm. (a) Due the quantum mechanical confinement in the quantum well, the lowest energy states of in the conduction band is no longer the conduction band edge, but the CB edge plus the confined state energy (particle in the box problem), where the confinement energy relative to the CB edge is given by the solutions for infinite barriers where n-1,2,.is the quantum number, n-1 is...
**Please Show All The Steps**
As I mentioned in the class assume that we have a GaAs (Gallium
Arsenide) sample which was doped with excessive As to produce a
resistivity of 0.05 Ωm. Owing to the presence of an unknown
acceptor impurity the actual resistivity was 0.06Ωm, the sample
remaining n-type. What were the concentrations of donors and
acceptors present?
(Please take μe=0.85 m2/Vs and assume that all impurity atoms
are ionized)
PHYSICAL CONSTANTS Avagadro's Number NA- 6.02 x 10*23...
4. (a) The energy states of Landau levels are given by where wc is the cyclotron frequency Using this and the 2D density of states given by where m is the carrier effective mass, deduce the degeneracy of a Landau Level Sketch these Landau levels on a graph of number n(E) verses energy (E), and indicate the position of the Fermi Energy for a filling factor of 8 4 (b) Sketch the band diagram for a heterojunction between p-type AlGaAs...
summatize the following info and break them into differeng key points. write them in yojr own words
apartus
6.1 Introduction—The design of a successful hot box appa- ratus is influenced by many factors. Before beginning the design of an apparatus meeting this standard, the designer shall review the discussion on the limitations and accuracy, Section 13, discussions of the energy flows in a hot box, Annex A2, the metering box wall loss flow, Annex A3, and flanking loss, Annex...
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