.1. Sketch the atomic structure of copper and discuss why it is a good conductor and how its structure is different from that of germanium, silicon, and gallium arsenide.
2. Determine the thermal voltage for a diode at a temperature of 20°C.
3. Given a diode current of 6 mA, Vr= 26 mV, n= 1, and Is= 1 nA, find the applied voltage VD.
4. Compare the characteristics of a silicon and a germanium diode and determine which you would prefer to use for most practical applications
5. Calculate the de and ac resistances for the diode of Fig. 1.15 at a forward current of 10 mA and compare their magnitudes.
Sketch the atomic structure of copper and discuss why it is a good conductor and how its structure is different from that of germanium, silicon, and gallium arsenide.
1.) Determine the intrinsic carrier density in Germanium and Gallium Arsenide at 27°C The mass of a free electron, mo 9.11 x 10 kg . The Planck's constant, h 6.626 x 10-4J-s or 4.14 x 10s eV-s . The Boltzmann's constant, k 1.38 x 10-23 J/K or 8.617 x 10° eV/K Symbol Germanium Silicon Gallium Arsenide E, (eV)1 0.66 Bandgap energy at 300 K The effective mass of the electrons l m、! 0.55m The effective mass of the holes ma0.37mo...