The resistivity in an n-type GaAs semiconductor at T = 300 K is ρ = 2...
The resistivity in an n-type GaAs semiconductor at T = 300 K is ρ = 2 Ω-cm. Determine the thermal-equilibrium values of electron and hole concentration.
Question 7 options:
a) no = 3.67 X 1014 cm-3 po = 8.83 X 10-3 cm-3
b) po = 3.25 X 1015 cm-3 no = 6.92 X 104 cm-3
c) po = 6.92 X 1015 cm-3 no = 3.25 X 104 cm-3
d) no = 8.83 X 1014 cm-3 po = 3.67 X 10-3 cm-3
Homework Answers
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The resistivity in an n-type GaAs semiconductor at T = 300 K is
ρ = 2...
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and...
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and No 0. The GaAs is illuminated with a light source at t = 0 s, resulting in a uniform generation rate of electron hole pairs g' 1020 cm . The electric field is zero. a) Give the analytic expression for the excess-carrier concentration δn(t) versus the time t>0s b) The steady state excess carrier concentration is found to be on( is the minority carrier...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be approximated as un = 88+ - 0.88*n where N is 1+1.26 X 1017 the total ionized impurity concentration /cm? At 300 K the hole mobility in p-type silicon in cm N.s can be approximated as Hp = 54 + 5.88xN where N is the total ionized impurity concentration /cm3. Use these equations to generate plots of electron and hole mobility in silicon as a...
A “thin” slab (thickness d << 1/α, where α is the absorption coefficient) of GaAs semiconductor...
A “thin” slab (thickness d << 1/α, where α is the absorption coefficient) of GaAs semiconductor at T = 300 K is uniformly doped with NA = 1016 cm-3 and ND = 0. The GaAs is illuminated with a light source at t = 0 s, resulting in a uniform generation rate of electron hole pairs g’ = 1020 cm-3s-1 through-out the slab of GaAs. The electric field is zero. a) Give the analytic expression for the excess-carrier concentration δn(t)...
PartYour AnswerCorrect AnswerToleranceMarks Comment 4.0 1% 1.00 Correct Total: 1.0 A p-type semiconductor, doped to a...
PartYour AnswerCorrect AnswerToleranceMarks Comment 4.0 1% 1.00 Correct Total: 1.0 A p-type semiconductor, doped to a uniform concentration of 5.3 x 1015 cm-3, is exposed to a light source which generates electron-hole pairs everywhere in the semiconductor at a rate of 8.8 x 1020 cm-3s-1. The excess carrier lifetime is 0.1 us and the intrinsic carrier concentration is 6.9 x 109 cm-3. Which of the following most accurately gives the hole concentration at steady state? Assume band-to-band transition. Please choose...
D Question 5 5 pts Compute the resistivity of an intrinsic semiconductor at 300 K, in...
D Question 5 5 pts Compute the resistivity of an intrinsic semiconductor at 300 K, in units of ?-m, given that it has an intrinsic carrier concentration of 6.5 x1022 m-3 and electron and hole mobilities of 0.43 and 0.09 m2/V-s, respectively. Answer Format: X.XEX Note this is scientific notation format Example: If your answer is 0.000000621, type 6.21E-7 Unit: ?-m
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of...
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of 500 cm/\-sec and 1500 cm²/.sec respectively. The semiconductor is maintained at 300 K. Excess hole concentration varies with distance (x) as p(x) = 1015 exp ( -.) cm3 Calculate hole diffusion current density at x = 0 and x=Lp if the lifetime of holes is 0.01 us.
Consider an n-type semiconductor at 300 K. The electron concentration increases linearly from 5 x 1015/cm3...
Consider an n-type semiconductor at 300 K. The electron concentration increases linearly from 5 x 1015/cm3 at x = 0 to 1016 /cm3 at x-50 μm. The electron mobility is 1000 cm2/V-s. The diffusion current density at x = 10 μm is Please choose one: a) O8.1 A/cm2 b) 12.2 A/cm2 c)2.2 A/cm2 d) 6.2 A/cm2 04.1 A/cm2
7. For a typical n-type GaAs Gunn diode, estimate Electron drift velocity and negative electron mobility...
7. For a typical n-type GaAs Gunn diode, estimate Electron drift velocity and negative electron mobility for the following parameters: threshold field Ea-2800 V/cm, Applied field E= 3000 V/cm, Device length L=1 um, Doping concentration no-3 X 1014 cm and operating frequency f= 12 GHz.
7. For a typical n-type GaAs Gunn diode, estimate Electron drift velocity and negative electron mobility for the following parameters: threshold field Ea-2800 V/cm, Applied field E= 3000 V/cm, Device length L=1 um, Doping concentration...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C if the hole mobility is 460 cm V's and the electron mobility is 1350 cm? Vis! Assume an intrinsic carrier density of 1.45 x 10 carriers/cm' and an electron charge of -0.16 x 10-4C (3 marks) b) Using Figure 8, calculate the conductivity of the Si intrinsic semiconductor if the temperature is increased to 150°C, assuming the same electron and hole mobilities (2 marks)...
A piece of p-type GaAs is doped with a net impurity concentration of N Na-5 × 1018 m-3. Is it deg...
A piece of p-type GaAs is doped with a net impurity concentration of N Na-5 × 1018 m-3. Is it degenerate or nondegenerate? Find its electron and hole concentrations and its Fermi level at 300 K. How much is the shift of the Fermi level, measured from the intrinsic Fermi level, caused by the doping of the impurity? Compare the results obtained in this problem for the p-type GaAs with those found in Example 12.3 for the n-type GaAs of...
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and No 0. The GaAs is illuminated with a light source at t = 0 s, resulting in a uniform generation rate of electron hole pairs g' 1020 cm . The electric field is zero. a) Give the analytic expression for the excess-carrier concentration δn(t) versus the time t>0s b) The steady state excess carrier concentration is found to be on( is the minority carrier...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be approximated as un = 88+ - 0.88*n where N is 1+1.26 X 1017 the total ionized impurity concentration /cm? At 300 K the hole mobility in p-type silicon in cm N.s can be approximated as Hp = 54 + 5.88xN where N is the total ionized impurity concentration /cm3. Use these equations to generate plots of electron and hole mobility in silicon as a...
PartYour AnswerCorrect AnswerToleranceMarks Comment 4.0 1% 1.00 Correct Total: 1.0 A p-type semiconductor, doped to a uniform concentration of 5.3 x 1015 cm-3, is exposed to a light source which generates electron-hole pairs everywhere in the semiconductor at a rate of 8.8 x 1020 cm-3s-1. The excess carrier lifetime is 0.1 us and the intrinsic carrier concentration is 6.9 x 109 cm-3. Which of the following most accurately gives the hole concentration at steady state? Assume band-to-band transition. Please choose...
D Question 5 5 pts Compute the resistivity of an intrinsic semiconductor at 300 K, in units of ?-m, given that it has an intrinsic carrier concentration of 6.5 x1022 m-3 and electron and hole mobilities of 0.43 and 0.09 m2/V-s, respectively. Answer Format: X.XEX Note this is scientific notation format Example: If your answer is 0.000000621, type 6.21E-7 Unit: ?-m
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of 500 cm/\-sec and 1500 cm²/.sec respectively. The semiconductor is maintained at 300 K. Excess hole concentration varies with distance (x) as p(x) = 1015 exp ( -.) cm3 Calculate hole diffusion current density at x = 0 and x=Lp if the lifetime of holes is 0.01 us.
Consider an n-type semiconductor at 300 K. The electron concentration increases linearly from 5 x 1015/cm3 at x = 0 to 1016 /cm3 at x-50 μm. The electron mobility is 1000 cm2/V-s. The diffusion current density at x = 10 μm is Please choose one: a) O8.1 A/cm2 b) 12.2 A/cm2 c)2.2 A/cm2 d) 6.2 A/cm2 04.1 A/cm2
7. For a typical n-type GaAs Gunn diode, estimate Electron drift velocity and negative electron mobility for the following parameters: threshold field Ea-2800 V/cm, Applied field E= 3000 V/cm, Device length L=1 um, Doping concentration no-3 X 1014 cm and operating frequency f= 12 GHz.
7. For a typical n-type GaAs Gunn diode, estimate Electron drift velocity and negative electron mobility for the following parameters: threshold field Ea-2800 V/cm, Applied field E= 3000 V/cm, Device length L=1 um, Doping concentration...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C if the hole mobility is 460 cm V's and the electron mobility is 1350 cm? Vis! Assume an intrinsic carrier density of 1.45 x 10 carriers/cm' and an electron charge of -0.16 x 10-4C (3 marks) b) Using Figure 8, calculate the conductivity of the Si intrinsic semiconductor if the temperature is increased to 150°C, assuming the same electron and hole mobilities (2 marks)...
A piece of p-type GaAs is doped with a net impurity concentration of N Na-5 × 1018 m-3. Is it degenerate or nondegenerate? Find its electron and hole concentrations and its Fermi level at 300 K. How much is the shift of the Fermi level, measured from the intrinsic Fermi level, caused by the doping of the impurity? Compare the results obtained in this problem for the p-type GaAs with those found in Example 12.3 for the n-type GaAs of...
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