Question

Q1

Which of the following is true about the surface mobility of MOSFETs ?

Select one:

a. Surface mobility goes up as electric field strength increases

b. Surface mobility stays the same when silicon is put under mechanical stress

c. Surface mobility is the same regardless of the surface orientation of the silicon crystal

d. None of these

e. Surface mobility is higher for holes than it is for electrons

Q2

What is the drain current in microamps for an NMOS FET with Vgs = 816mV, Vds = 111mV, and Vsb = 0V ? Include the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 87nm. Use: W = 6.1μm, L = 0.6μm, Toxe = 50 angstroms, Vt = 353mV, μns = 340 cm^2/Vs, and Vsat = 8 x 10^6 cm/s.

Q3

Which of the following is true about velocity saturation in a MOSFET ?

Select one:

a. Velocity saturation is more prominent at low temperatures

b. Velocity overshoot occurs at long channel lengths, since some carriers emit optical phonons while crossing the channel

c. Carrier velocity saturates at high electric field strengths, with the value highly dependent on the doping concentration in the body

d. Velocity saturation occurs when the vertical electric field strength between the gate and the channel gets too high

e. All of these

Answer 1

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