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15.14 The parameters of the NMOS transmission gate in Fig. 15.23 are V-1.5 V, K 0.1...
D 5.50 The NMOS transistors in the circuit of Fig. P5.50 have V, = 0.5 V,...
D 5.50 The NMOS transistors in the circuit of Fig. P5.50 have V, = 0.5 V, M, Cox = 250 u A/V“, a = 0, and L, = L2 = 0.25 um. Find the required values of gate width for each of Q, and Q2, and the value of R, to obtain the voltage and current values indicated. +2.5 V CHAPTER 5 PROBLEMS 0.5 ma SR 0 +1.8 V Q2 450 = Figure P5.50
150 V 2.042 mA/V2, VM V-2.4 V,K a.) Find quiescent values: drain current ip, gate-to-source voltage...
150 V 2.042 mA/V2, VM V-2.4 V,K a.) Find quiescent values: drain current ip, gate-to-source voltage vas, and drain-to-source voltage VDs b.) Determine AC model parameters: gm and ro. c.) Determine amplifier model parameters: Ri, Ro and Ao d.) Determine the output voltage vi across the load R if v 1 mVp. +VDD GI E 00 i, R RI
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NM...
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NMOS PMOS -0.426 -0.29-0583 633 10261 Table 2 Capacitance parameters of NMOS and PMOS transistors in 0.13 micron CMOS process Cox Cov ma MOS 10.7 0.323 0.958 0.395 08 01 0288 0.8 P MOS-110.22ー10.298 11.02ー1042ー08 ー0.107ー0.1ーー0.8 (35 pt Q2 Inverter shown below is implemented in 0.13 um CMOS (8RF). The supply voltage is VDD-1.2 V. Both transistors have a channel length of 0.13...
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V,...
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V, (W/L)-(W/L)2-5. VDD-GV and IBIAs= 1.0 mA. a) Assuming λ-0 for all transistors, find the required DC gate- source voltages of M1 and M2 (VGsı and VGs2, respectively) BIAS VD out b) Again assuming 0 M2 for all transistors, what is the minimum DC value of VouT for which the amplifier works in high-gain regime? (W/L)2 in M1 For parts c)-f), Assume -0.01 for all...
D-17.121 The MOSFET in the circuit of Fig. P7.121 has V, 0.8 V, k,-5 mA/V", and...
D-17.121 The MOSFET in the circuit of Fig. P7.121 has V, 0.8 V, k,-5 mA/V", and V,-40 V (a) Find the values of Rş, Rp, and Ro so that Ip 0.4 mA, the largest possible value for Rp is used while a maximum signal swing at the drain of ±0.8 V is possible, and the input resistance at the gate is 10 M2. Neglect the Early effect. (b) Find the values of g and r at the bias point. (c)...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...
1. Design the common source amplifier shown in Figure 1 with Ip- 1 mA and Vo 5 V Determine V2 and Ri. The MOSFET characteristics are V-50 V, k-0.093 A/V, gate-to- drain capacitance, Cd 40 pF,...
1. Design the common source amplifier shown in Figure 1 with Ip- 1 mA and Vo 5 V Determine V2 and Ri. The MOSFET characteristics are V-50 V, k-0.093 A/V, gate-to- drain capacitance, Cd 40 pF, and Vi 1.1 V. (For PSpice simulations, use parameters: VTO. 1.1 LAMBDA-002 KP-0.093 CGDO-4E-7 w=100u L-I00u for the 2N7000 MOSFET.) a. Determine the gain and gm of the circuit b. Determine the low-frequency (high-pass response) poles of the common-source amplifier due to the coupling...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 k...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 kn. The transistors 25 M, and M, are identicalwith()M and M, are identical with (The oh M and M4 are identical with = ·The other transistor parameters are: indox-: 0.1 m1A/V2,VTN-0.5 V, γ-0 (body effect coefficient) and λ 0 (channel length modulation...
A retaining wall is to be constructed in a normally consolidated clayey sand deposit in the...
A retaining wall is to be constructed in a normally consolidated clayey sand deposit in the figure below. Ground water table is lmbelow the bottom of the excavation. A 20 kN/m2 surcharge pressure is applied over a wide area at the ground surface. Assume the wall moves into the excavation. Consider long-tem analysis (as it is usually the more critical analysis in excavation problems). Ignore capillarity as shown 20 kPa Clayey sand T17 kNm Y-20 kNm 5 m c'-10 kPa...
D 5.50 The NMOS transistors in the circuit of Fig. P5.50 have V, = 0.5 V, M, Cox = 250 u A/V“, a = 0, and L, = L2 = 0.25 um. Find the required values of gate width for each of Q, and Q2, and the value of R, to obtain the voltage and current values indicated. +2.5 V CHAPTER 5 PROBLEMS 0.5 ma SR 0 +1.8 V Q2 450 = Figure P5.50
150 V 2.042 mA/V2, VM V-2.4 V,K a.) Find quiescent values: drain current ip, gate-to-source voltage vas, and drain-to-source voltage VDs b.) Determine AC model parameters: gm and ro. c.) Determine amplifier model parameters: Ri, Ro and Ao d.) Determine the output voltage vi across the load R if v 1 mVp. +VDD GI E 00 i, R RI
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NMOS PMOS -0.426 -0.29-0583 633 10261 Table 2 Capacitance parameters of NMOS and PMOS transistors in 0.13 micron CMOS process Cox Cov ma MOS 10.7 0.323 0.958 0.395 08 01 0288 0.8 P MOS-110.22ー10.298 11.02ー1042ー08 ー0.107ー0.1ーー0.8 (35 pt Q2 Inverter shown below is implemented in 0.13 um CMOS (8RF). The supply voltage is VDD-1.2 V. Both transistors have a channel length of 0.13...
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V, (W/L)-(W/L)2-5. VDD-GV and IBIAs= 1.0 mA. a) Assuming λ-0 for all transistors, find the required DC gate- source voltages of M1 and M2 (VGsı and VGs2, respectively) BIAS VD out b) Again assuming 0 M2 for all transistors, what is the minimum DC value of VouT for which the amplifier works in high-gain regime? (W/L)2 in M1 For parts c)-f), Assume -0.01 for all...
D-17.121 The MOSFET in the circuit of Fig. P7.121 has V, 0.8 V, k,-5 mA/V", and V,-40 V (a) Find the values of Rş, Rp, and Ro so that Ip 0.4 mA, the largest possible value for Rp is used while a maximum signal swing at the drain of ±0.8 V is possible, and the input resistance at the gate is 10 M2. Neglect the Early effect. (b) Find the values of g and r at the bias point. (c)...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...
1. Design the common source amplifier shown in Figure 1 with Ip- 1 mA and Vo 5 V Determine V2 and Ri. The MOSFET characteristics are V-50 V, k-0.093 A/V, gate-to- drain capacitance, Cd 40 pF, and Vi 1.1 V. (For PSpice simulations, use parameters: VTO. 1.1 LAMBDA-002 KP-0.093 CGDO-4E-7 w=100u L-I00u for the 2N7000 MOSFET.) a. Determine the gain and gm of the circuit b. Determine the low-frequency (high-pass response) poles of the common-source amplifier due to the coupling...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 kn. The transistors 25 M, and M, are identicalwith()M and M, are identical with (The oh M and M4 are identical with = ·The other transistor parameters are: indox-: 0.1 m1A/V2,VTN-0.5 V, γ-0 (body effect coefficient) and λ 0 (channel length modulation...
A retaining wall is to be constructed in a normally consolidated clayey sand deposit in the figure below. Ground water table is lmbelow the bottom of the excavation. A 20 kN/m2 surcharge pressure is applied over a wide area at the ground surface. Assume the wall moves into the excavation. Consider long-tem analysis (as it is usually the more critical analysis in excavation problems). Ignore capillarity as shown 20 kPa Clayey sand T17 kNm Y-20 kNm 5 m c'-10 kPa...
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