Question

2. Copper (Cu) has Do=0.16 cm²/sec, AH=2.07 eV, and Aluminum (AI) has Do=0.047 cm²/sec, AH=1.28 eV a) Calculate the diffusion coefficient: Dcu and Dai at 600K. b) Calculate Dcu and Dal at their melting point. (Tm for Cu is 1083°C, and for Al is 660°C). c) Which temperature should you consider for diffusion issue when you select a metal contact for electronic circuit? Why? Which one is better for interconnects, Al or Cu? (Hint: D=D exp(-AH/KT))

Answer 1

Date book Selle a diffusion Goetherent for Due at Twe kand that De Boexbot-$41krt a Deu = Docu exp[-AHM/KT) Do = 0.16 cm²lsee Anu=2.07ev kB = 8.61733 810evik au 0176 x 10 --210778.617 Xoxooot D=016xto xe = 0.16 x 104 +2070/8-619x6) 2.44 X 2017 = 0.0655x 10 m² Iser Dur= 0.0655 x 104 cm2/set Lal at book DAR = Dope expet Ahaelkot) I DAL=0.047 X1 X - 1:28/8.617X105x600) 20.047X15"x é 1280 78.61786) 2 01067X10 m² sec 5.64 x 10 to 20.00833x10x co to m2) Doe 20-00833x10 10 cm/sec Teacher Standard

Pago Me Date Imcu - 1083°E -1356k TMAL = 660°c = 933k no Ahlket Diu = Doch e Der = 0.16 8 10 4 2 07/18.617 8 10 x 1356 = 016 xlox - 4.. qux 107 Du - 0.16 X10 H 0.0323 8 x 10t analsed पपप- NA DAC = Dose e Anne ketat 1 t= 128768.619X16x933) Doe=0.047Xto te (8.211 X 100 0.047 cm/sec Tose i 0.0057x156 cm2lsec How quickly on patented can afuse through another mectorial with anosease in temperature D is increase the high temperature to Selected for metal - contact for electronic ciuit onden is better for Interconnects, Feacher Signature