ZuoTi.Pro
Question

equilibrium

Screenshot (512).png




Draw the equilibrium and reverse-biased band diagram (indicate Ec, Ev, EF, E0, Ei) for- metal/semiconductor junction with the following specifications: [(3+3)M +(3+3)M]


Metal work function = 5 eV

Band-gap = 1.0 eV

Electron Affinity = 4.5 eV

Fermi Potential = 0.4 eV


Case 2


Metal work function = 5 eV

Band-gap = 1.0 eV

Electron Affinity = 4.5 eV

Fermi Potential = -0.4 eV


Acceptor Concentration = 1016 cm-3


0 0
Add a comment Improve this question Transcribed image text
Next > < Previous
Sort answers by oldest

Homework Answers

Answer #1

Answer vaccum 4-sev GC sev Torser Gi Egalev Tooner СЕР Metal-1 P-type work function for ptype semiconductor is Ys = 4.5+0.5toequi ti bя и м EC Bms ) (0) Ei EFM EFP -EV Metal P-Eч Ре .Reverse bias poside we apply more negative voltage than Metal Сс Ei CFP E qvin GIMCase-2 Vaccum 4.sev sev GEN Joneve Gi GEM lev Metal. Ev. work function for n-type semiconductor is Yogtool= 4.6 ev = Os hig eReverse bias n-side we apply was more positive notage than Metal. ерм. quin GC EIN Ein Eun win is applied voltage. native

2 0
Add a comment
Know the answer?
Add Answer to:
equilibrium
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Log In

Sign Up

Not the answer you're looking for? Ask your own homework help question. Our experts will answer your question WITHIN MINUTES for Free.
Similar Homework Help Questions

  • Problem 5. We want to make a Schottky diode on one surface of an n-type semiconductor, and an ohm...

    Problem 5. We want to make a Schottky diode on one surface of an n-type semiconductor, and an ohmic contact on the other side. The electron affinity is 5 eV, bandgap is 1.5 eV, and the Fermi potential (the difference between the Fermi level Ef and the intrinsic level Ei) is 0.25 eV d the values of the work functions of the two metals be? (Give your answer as greater than or less than certain values.) Sketch the band diagram...

  • equilibrium

    For a Metal-Insulator-Semiconductor (n-type) structure-1. Draw the C-V characteristics in high frequency and low frequency 2. Draw the band diagram (indicate Ec, Ev, EF, E0, Ei) from metal to semiconductor for:A) Accumulation RegionB) Depletion RegionC) Inversion Region3. Draw the charge density from metal to semiconductor for:A) Accumulation RegionB) Inversion Region

  • Draw the band diagram (the relative positions of conduction band edge EC, valence band edge Ev,...

    Draw the band diagram (the relative positions of conduction band edge EC, valence band edge Ev, Fermi level EF) for the four following cases. Clearly note EC −EF, EF −EV, Ei −EF, EG = EC −EV. Ei is the intrinsic Fermi level. Take NC=NV =1025 m−3, EG=1.1 eV, ni=1.5×1016 m−3, kT=0.026 eV. (Q1.1) p-type, NA=5×1023 m−3. (Q1.2) p-type, NA=5×1021 m−3. (Q1.3) n-type, ND=5×1023 m−3. (Q1.4) n-type, ND=5×1021 m−3. Q2 Draw the band diagram (the relative positions of conduction band edge...

  • 1. a. Find the main error in each of the band diagrams shown below. For all...

    1. a. Find the main error in each of the band diagrams shown below. For all of the band diagrams Ny 1019/cm3, Ne- 1019/cm3, ni = 3 x 108/cm". E,-1.25 eV, T = 300 K. Ef Ef EFi Main error: Main error: Main error: Main error: Consider a semiconductor sample with the following characteristics: EG 1.25 eV, T 300 K, Nd 5 x 101*/cm3, Na 1014/cm3, N.-1019/cm3, N.-1019/cm3, ni-3 × 108/cm3. Assume complete ionization b. Find the equilibrium electron and...

  • Draw the energy band diagram at equilibrium for the p+ /n/p semiconductor heterostructure (p+ indicates a...

    Draw the energy band diagram at equilibrium for the p+ /n/p semiconductor heterostructure (p+ indicates a p-type semiconductor which is heavily doped, i.e., more heavily doped than p). You should indicate Ec (conduction band), Ev (valence band), Ei (intrinsic Fermi level), and Ef (Fermi level) throughout the device structure. show your work (i.e., you should start from the diagram of individual material pieces). State any reason for your drawing.

  • An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped...

    An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...

  • (2) In a semiconductor with an energy gap Eg between the valence and the conduction bands we can take Ef (the Fermi ene...

    (2) In a semiconductor with an energy gap Eg between the valence and the conduction bands we can take Ef (the Fermi energy) to be halfway between the bands (see figure below): Conduction band Energy gap Eg Valence band Semiconductor a. Show that for a typical semiconductor or insulator at room temperature the Fermi- Dirac factor is approximately equal to exp(-E 2kBT). (Typical Eg for semi-conductors ranges from about 0.5eV to 6eV at T-293K.) b. In heavily doped n-type silicon,...

  • 7. Find the position of the intrinsic Fermi level with respect to Emidgap for silicon, germanium,...

    7. Find the position of the intrinsic Fermi level with respect to Emidgap for silicon, germanium, gallium arsenide, and indium arsenide. Use the effective density of states values from problem 5. 8. a. Draw a band diagram for silicon doped 107/cmp-type and label the band gap and the position of the Fermi level. b. Draw a band diagram for gallium arsenide doped 10/cmn-type and label the band gap and the position of the Fermi level. c. Draw a band diagram...

  • 6. A silicon wafer is doped with donor atoms, N-5x0 cm(bonus question) (a) Determine (Ec-EF), (EF...

    6. A silicon wafer is doped with donor atoms, N-5x0 cm(bonus question) (a) Determine (Ec-EF), (EF-Ev), (Ep-E) at 300 K. Assume all the donor atoms are ionized. (b) Plot the position of Fermi level (EF) in the bandgap as a function of temperature for 300 Ts700 K. In this temperature range, it can be assumed that all the donor atoms are ionized. (c) Plot the position of Fermi level (Er) in the bandgap as acceptor atoms are added (N.- 104,...

  • A) Show that the chemical potential in an intrinsic semiconductor lies in the middle of the gap a...

    a) Show that the chemical potential in an intrinsic semiconductor lies in the middle of the gap at low temperature. (b) Explain how the chemical potential varies with temperature if the semiconductor is doped with (i) donors (ii) acceptors. (c) A direct-gap semiconductor is doped to produce a density of 1023electrons/m3. Calculate the hole density at room temperature given that the gap is 1.0 eV, and the effective mass of carriers in the conduction and valence band are 0.25 and...

ADVERTISEMENT
Free Homework Help App
Download From Google Play
Scan Your Homework
to Get Instant Free Answers
Need Online Homework Help?
Ask a Question
Get Answers For Free
Most questions answered within 3 hours.
ADVERTISEMENT
ADVERTISEMENT
ADVERTISEMENT