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Qb. The figure below shows a different NMOS FET in a circuit. The bias resistors Rei...
1. Consider the CMOS source follower (or common drain) amplifier shown below. The NMOS transistor...
1. Consider the CMOS source follower (or common drain) amplifier shown below. The NMOS transistor operates in the saturation region. C, C2 are coupling capacitors. 「en C2 Rs 2ok The small-signal model for NMOS transistor is given below gnUgs The parameters are given below: (1) Please derive the complete small-signal circuit for the amplifier (10pts). (2) Apply Miller Effect to the small-signal circuit from step (1) to estimate the 3dB bandwidth of the amplifier. (Note: applying Miller Effect introduces a...
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25,...
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25, and V.=0.4V. (20 pts) (a) Find the value of Vas that results in saturation mode operation with a lp current of 0.1 mA. Neglect the Early effect. (2.5 pts) +1.5 V in BRD (b) Find the value of Rp that results in a de drain voltage of 0.5V. (2.5 pts) = = = (e) Find gw and r, at the de operating point specified...
URGENT The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and...
URGENT
The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
Q5. Below figure is a LONG-channel NMOS device biased with two voltage source (Ves and Vos)....
Q5. Below figure is a LONG-channel NMOS device biased with two voltage source (Ves and Vos). Assuming this NMOS has a threshold voltage V, of 0.5V, mobility 350cm-NV m, oxide thickness of 10nm, and relative permittivity of 3.9. Calculate the drain current Ing with below bias configurations: (0) Ves = 2V, Vos = 1V, W/L = 4; (ii) Vas = 1V, Vos = 3V, W/L = 2;
Score 2. (22 points) For the circuit in Figure 2, the transistor parameters are: 2 0,...
Score 2. (22 points) For the circuit in Figure 2, the transistor parameters are: 2 0, VN=2V, Ka-1mA/V2, all the capacitors are assumed to act as short circuits at the signal frequency (1) Calculate the Q-point (Vos. I Vos); (2) Sketch the small-signal equivalent circuit, you must label the polarities of the voltages and the direction of the current; (3) Determine the voltage gain A, vo/v (4) Determine the input resistance Ri and output resistance Ro V1 5 10 V...
Q5 Figure 4 is a common-source circuit. The PMOS transistor parameters are VTP = -0.6V, Kp...
Q5 Figure 4 is a common-source circuit. The PMOS transistor parameters are VTP = -0.6V, Kp = 1mA/V and 1 = 0. Assume the transistor is biased in saturation such that Ipo = 0.25mA and Vspo = 1.5V. a) Find Rs and RD- b) Draw the small signal ac equivalent circuit. c) Determine the circuit's input resistance (R.), output resistance (Rour) and small signal voltage gain (Av) Figure 4 = 100k2 RO
Rsig Nahyan vgs ( gmugs, r01 RDS Vsig ) Ril Consider the small signal equivalent circuit...
Rsig Nahyan vgs ( gmugs, r01 RDS Vsig ) Ril Consider the small signal equivalent circuit of an amplifier shown above. The parameters are given to be: R1 = 3000, R2 = 10160, R2=100%, RD=RL=50 Rsig = 202, VGS1=3.5V. Vt = 0.5V and kn = 1mA/V^2. The transistor output resistances are represented by ro1, ra2 with both the transistors in saturation and having |MAL= 40V and same DC current flowing through them Find the small signal parameter of the MOSFET:...
Vss (b) Find ( Drav amp the variation of D 7.103 Figure P7.103 feedback-bias circuit of...
Vss (b) Find ( Drav amp the variation of D 7.103 Figure P7.103 feedback-bias circuit of Fig. 7.50. Using a 5-V supply with an NMOS transistor for which V, =0.8 V, k. = 8 mA/V =0, provide a design that biases the transistor at I = 1 nA, with Vps large enough to allow saturation operation for a 2-V negative signal swing at the drain. Use 22 MS2 as the largest resistor in the feedback-bias network. What values of R...
Question 1: 7.33 +15V 1O MO R-200k 16n 7k MO 7.33 Figure P7.33 shows a discrete-circuit...
Question 1: 7.33 +15V 1O MO R-200k 16n 7k MO 7.33 Figure P7.33 shows a discrete-circuit amplifier. The input signal is coupled to the gate through a very large capacitor (shown as infinite). The transistor source is connected to ground at signal frequencies via a very large capacitor (shown as infinite). The output voltage signal that develops at the drain is coupled to a load resistance via a very large capacitor (shown as infinite). All capacitors behave as short circuits...
The NMOS transistor in the circuit below has the following parameters: (W/L).(KP2)-826pA/V2, and VA-50V. ,-0.9V, K...
The NMOS transistor in the circuit below has the following parameters: (W/L).(KP2)-826pA/V2, and VA-50V. ,-0.9V, K a. Calculate the drain-to-source resistance (rds) value. (Hint: VA- 1/) b. What is the value of the transconductance (gm)? (ignore A ONLY for this part) C. What is the value of the DC voltage Vo? (ignore λ ONLY for this part) d. Draw the small-signal equivalent circuit (including rds) e. Find the equation of the small-signal voltage gain Av-Vo/vi. This equation should be in...
1. Consider the CMOS source follower (or common drain) amplifier shown below. The NMOS transistor operates in the saturation region. C, C2 are coupling capacitors. 「en C2 Rs 2ok The small-signal model for NMOS transistor is given below gnUgs The parameters are given below: (1) Please derive the complete small-signal circuit for the amplifier (10pts). (2) Apply Miller Effect to the small-signal circuit from step (1) to estimate the 3dB bandwidth of the amplifier. (Note: applying Miller Effect introduces a...
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25, and V.=0.4V. (20 pts) (a) Find the value of Vas that results in saturation mode operation with a lp current of 0.1 mA. Neglect the Early effect. (2.5 pts) +1.5 V in BRD (b) Find the value of Rp that results in a de drain voltage of 0.5V. (2.5 pts) = = = (e) Find gw and r, at the de operating point specified...
URGENT
The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
Q5. Below figure is a LONG-channel NMOS device biased with two voltage source (Ves and Vos). Assuming this NMOS has a threshold voltage V, of 0.5V, mobility 350cm-NV m, oxide thickness of 10nm, and relative permittivity of 3.9. Calculate the drain current Ing with below bias configurations: (0) Ves = 2V, Vos = 1V, W/L = 4; (ii) Vas = 1V, Vos = 3V, W/L = 2;
Score 2. (22 points) For the circuit in Figure 2, the transistor parameters are: 2 0, VN=2V, Ka-1mA/V2, all the capacitors are assumed to act as short circuits at the signal frequency (1) Calculate the Q-point (Vos. I Vos); (2) Sketch the small-signal equivalent circuit, you must label the polarities of the voltages and the direction of the current; (3) Determine the voltage gain A, vo/v (4) Determine the input resistance Ri and output resistance Ro V1 5 10 V...
Q5 Figure 4 is a common-source circuit. The PMOS transistor parameters are VTP = -0.6V, Kp = 1mA/V and 1 = 0. Assume the transistor is biased in saturation such that Ipo = 0.25mA and Vspo = 1.5V. a) Find Rs and RD- b) Draw the small signal ac equivalent circuit. c) Determine the circuit's input resistance (R.), output resistance (Rour) and small signal voltage gain (Av) Figure 4 = 100k2 RO
Rsig Nahyan vgs ( gmugs, r01 RDS Vsig ) Ril Consider the small signal equivalent circuit of an amplifier shown above. The parameters are given to be: R1 = 3000, R2 = 10160, R2=100%, RD=RL=50 Rsig = 202, VGS1=3.5V. Vt = 0.5V and kn = 1mA/V^2. The transistor output resistances are represented by ro1, ra2 with both the transistors in saturation and having |MAL= 40V and same DC current flowing through them Find the small signal parameter of the MOSFET:...
Vss (b) Find ( Drav amp the variation of D 7.103 Figure P7.103 feedback-bias circuit of Fig. 7.50. Using a 5-V supply with an NMOS transistor for which V, =0.8 V, k. = 8 mA/V =0, provide a design that biases the transistor at I = 1 nA, with Vps large enough to allow saturation operation for a 2-V negative signal swing at the drain. Use 22 MS2 as the largest resistor in the feedback-bias network. What values of R...
Question 1: 7.33 +15V 1O MO R-200k 16n 7k MO 7.33 Figure P7.33 shows a discrete-circuit amplifier. The input signal is coupled to the gate through a very large capacitor (shown as infinite). The transistor source is connected to ground at signal frequencies via a very large capacitor (shown as infinite). The output voltage signal that develops at the drain is coupled to a load resistance via a very large capacitor (shown as infinite). All capacitors behave as short circuits...
The NMOS transistor in the circuit below has the following parameters: (W/L).(KP2)-826pA/V2, and VA-50V. ,-0.9V, K a. Calculate the drain-to-source resistance (rds) value. (Hint: VA- 1/) b. What is the value of the transconductance (gm)? (ignore A ONLY for this part) C. What is the value of the DC voltage Vo? (ignore λ ONLY for this part) d. Draw the small-signal equivalent circuit (including rds) e. Find the equation of the small-signal voltage gain Av-Vo/vi. This equation should be in...
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