Summarize and discuss the characteristics of different equivalent models for BJT transistor.
Summarize and discuss the characteristics of different equivalent models for BJT transistor.
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
In a small signal voltage amplifier using a pnp transistor shown below, the voltage gain is 350.2. The value of a-0.95. Find the equivalent model emitter resistance re in Ohms if Rc-4.1K2. The BJT is operating at room temperature and VBE 0.7V RE-10K CCI vi Cc2 Rc In a small signal voltage amplifier using a pnp transistor shown below, the voltage gain is 350.2. The value of a-0.95. Find the equivalent model emitter resistance re in Ohms if Rc-4.1K2. The...
VK =0,4k Figure 1: Schematic (left) and equivalent circuit (right) of a hypothetical BJT-based device. 5. Two BJTs are conneted as indicated in Figure 1. Sketch the expected IV characteristics. (IA VS. VA for different values of IG) (10 pts) (a) Explain the operation of this device in detail. (b) Sketch the anticipated IV characteristics (IA vs VA) for different values of Ig.
answer i-iv please The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
Q2. Answer each of the following: (a) When a bipolar junction transistor (BJT) is used as an electronic switch, what operating regions does the BJT alternate between? For each operating region identified, what way are the junctions of the BJT biased? (b) Explain what each of the operating regions, identified in part (i) of this question, mean and clearly state the important conditions that are necessary to ensure that the BJT is operating in each of these regions. Include a...
(c) Draw the transfer and output I-V characteristics of the p'np transistor for CB and CE configurations. (d) Draw the small-signal equivalent circuit of the p'np transistor
ASAP! Question 1 [Soalan 1] (a) Describe the condition when a npn BJT transistor operates in saturation condition and what are the terminal currents and voltages conditions during saturation. [Terangkan keadaan bila satu transistor BJT npn beroperasi dalam keadaan tepu dan apakah keadaan arus dan voltan terminal semasa tepu. ] (20 Marks/Markah) (b) Consider the BJT transistor circuit in Figure 1. If Bpc = 100 and VBE = 0.65V, calculate: [Pertimbangkan litar transistor BJT dalam Rajah 1. Jika Bpc =...
With ideal current sources, each BJT transistor has the parameters of gm, I'r and ro. Determine the gain of each circuit. VB3 Vyso B2 Vout Vout Vout 1 B1 Vin2 With ideal current sources, each BJT transistor has the parameters of gm, I'r and ro. Determine the gain of each circuit. VB3 Vyso B2 Vout Vout Vout 1 B1 Vin2
2. With ideal current sources, each BJT transistor has the parameters of gm, rx and ro. Determine the voltage gain of each circuit. 83 Vou Va BI ยา in2 Vin in2 2. With ideal current sources, each BJT transistor has the parameters of gm, rx and ro. Determine the voltage gain of each circuit. 83 Vou Va BI ยา in2 Vin in2
k) Biasing of a BJT transistor is the setting of the collector emitter voltage and the collector current to the desired dc values. These voltages and currents determine the operating point (quiescent point, Q point). The three circuits given in Fig. 6.4 are designed to give the same operating point 12V 12V Rc Rc 12V R1 ?1 Rc R1 ?? Figure 6.4 a. Obtain the expression for VC in terms of the transistor parameters ?, VBE, Ico and the circuit...