Question

EE 3329 Problem #3B: Design a Resistor Name Design a silicon integrated-circuit resistor to achieve the following spec R-: lD1D8X 10°42 : 1D are 7th & gh digits of your l . 1104 cmW110 cm . Constraint: 8x10 cm sL 20 10 cm T 30OK, and kT-0.0259 ev . Assume complete ionization Specification -dirin current thermal exide p-ype sutstrate Design Parameters: A. Niknejad, UC Berkeley atoms/cm3 atoms/cm cm Result: Note: Attach documentation of your design process

R=7.0*10^3

Answer 1

By the given that R = 10_ T 1 D_5 times 10^3 Ohm t = 1 times 10^- 4 cm w = 1 times 10^- 4 cm t = 300 k k T = 0.0259 ev we have to consider design parameter valves N_ D & N_ A N_ D = 4 times 10^6 atom/cm^3 N_ A = 3 times 10^5 atoms/cm^3 Here Given the range is L 8 times 10^4 cm lessthanorequalto L lessthanorequalto 20 times 10^-4 cm So, we consider L = 20 times 10^- 4 cm \r\n Here we have consider Electron mobility mu_ n = 1400 cm^2/v sec Hole mobility mu_ p = 450 cm^2/v - sec Here the intrinsic corner concern n_ i = 1.5 times 10^10 cm^- 3 we have to consider the expression for a resistance as a silicon R = rho L/A A = w T R = rho L/w T Here the resistivity = rho = 1/sigma Here sigma = means conductivity sigma = e (n mu_ n + rho mu_ p)