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#1. Estimate the resistivity of 28Si (density of 2.42 × 103 kg/m" and a valence of...
#5. A) Estimate the resistivity of 2"Si (density of 1.04 x 1029 electrons/m3). The Fermi energy f...
#5. A) Estimate the resistivity of 2"Si (density of 1.04 x 1029 electrons/m3). The Fermi energy for silicon is about 5 eV. Assume A is roughly 100 times the atomic spacing, and the atomic spacing is 2.68 x 10-10 m. B) It turns out that the actual resistivity of silicon is much larger than what is predicted in Part A. Why might this be? C) What is the probability that a conduction electron in Si at 50, 000 K is...
2) Silver has a density of 10.5 x 103 kg/m3 and a resistivity of 1.60 x...
2) Silver has a density of 10.5 x 103 kg/m3 and a resistivity of 1.60 x 10-8 m at room temperature. (a) On the basis of the classical free electron gas model, and assuming that each silver atom contributes one electron to the electron gas, calculate the average time between collisions of the electrons. (b) Calculate the mean free path from t and the electron's thermal velocity. (c) How does the mean free path compare to the lattice spacing?
(2) In a semiconductor with an energy gap Eg between the valence and the conduction bands we can take Ef (the Fermi ene...
(2) In a semiconductor with an energy gap Eg between the valence and the conduction bands we can take Ef (the Fermi energy) to be halfway between the bands (see figure below): Conduction band Energy gap Eg Valence band Semiconductor a. Show that for a typical semiconductor or insulator at room temperature the Fermi- Dirac factor is approximately equal to exp(-E 2kBT). (Typical Eg for semi-conductors ranges from about 0.5eV to 6eV at T-293K.) b. In heavily doped n-type silicon,...
Hello, please help with this problem. Thanks in advance Q.3 (10+10) (a) Find the electron density...
Hello, please help with this problem. Thanks in
advance
Q.3 (10+10) (a) Find the electron density (N/V) of a free electron gas in the limit of T O if the Fermi energy of this gas is 5.2 eV. Find also the Fermi temperature of this gas. (b) The carrier concentration in a thin film of aluminum is 2 x 1022/cm and the resistivity of this film is 2 ul2 cm. Estimate the electron relaxation time for this film. Boltzmann constant...
14/04/19 for a free electron gas the density of states is Show that potassium (atomic density 1....
14/04/19
for a free electron gas the density of states is
Show that potassium (atomic density 1.40*10^28 m^-3) with Fermi
energy of electron gas 2.12 eV donates 1 electron per potassium
atom.
2 2 ((2m) 242n
2 2 ((2m) 242n
Test 2, ENS345, Spring 2019 1. A photoresistor is made of in-type silicon with resistivity of 10 ...
Qno 2 only
Test 2, ENS345, Spring 2019 1. A photoresistor is made of in-type silicon with resistivity of 10 Qcm and recombination lifetime of 30 ps. The photoresistor is illuminated with light so that the electron-hole pairs generation throughout its volume is resistivity of the photoresistor under illumination 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift...
Please help me 1. In degenerate p-type silicon, a. The Fermi energy is above the valence...
Please help me
1. In degenerate p-type silicon, a. The Fermi energy is above the valence energy and below the intrinsic Fermi energy b. The Fermi energy is below the valence energy c. The Fermi energy is above the conduction energy d. The Fermi energy is below the conduction energy and above the intrinsic Fermi energy 2. A semiconductor has No 5X 1010 cm3 and N-2X 1018 cm2. It is a. b. C. d. N-type and electrons are the majority...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...
13. The resistivity of aluminum at 25 'C has been measured to be 2.72 x 10-8 0 m. The thermal coefficient of resistivity of aluminum at 0 C is 4.29 x 10-3 K-1. Aluminum has a valency of 3, a d...
13. The resistivity of aluminum at 25 'C has been measured to be 2.72 x 10-8 0 m. The thermal coefficient of resistivity of aluminum at 0 C is 4.29 x 10-3 K-1. Aluminum has a valency of 3, a density of 2.70 g cm3, and an atomic mass of 27 a. Calculate the resistivity of aluminum at-40°С. (Ans: 2.03 x 103 Ω m) b. What is the thermal coefficient of resistivity at-40'C? (Ans: 5.23x 103K c. Estimate the mean...
1. A photoresistor is made of p-type silicon with resistivity of 0.2 Qcm and recombination lifeti...
pls do ques 1 and 2
1. A photoresistor is made of p-type silicon with resistivity of 0.2 Qcm and recombination lifetime of 200 μ. when illuminated with light, the resistivity of the photoresistor decreases down to 0.05 0cm. Find the electron-hole pairs generation rate during illumination. 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift velocities of...
#5. A) Estimate the resistivity of 2"Si (density of 1.04 x 1029 electrons/m3). The Fermi energy for silicon is about 5 eV. Assume A is roughly 100 times the atomic spacing, and the atomic spacing is 2.68 x 10-10 m. B) It turns out that the actual resistivity of silicon is much larger than what is predicted in Part A. Why might this be? C) What is the probability that a conduction electron in Si at 50, 000 K is...
2) Silver has a density of 10.5 x 103 kg/m3 and a resistivity of 1.60 x 10-8 m at room temperature. (a) On the basis of the classical free electron gas model, and assuming that each silver atom contributes one electron to the electron gas, calculate the average time between collisions of the electrons. (b) Calculate the mean free path from t and the electron's thermal velocity. (c) How does the mean free path compare to the lattice spacing?
(2) In a semiconductor with an energy gap Eg between the valence and the conduction bands we can take Ef (the Fermi energy) to be halfway between the bands (see figure below): Conduction band Energy gap Eg Valence band Semiconductor a. Show that for a typical semiconductor or insulator at room temperature the Fermi- Dirac factor is approximately equal to exp(-E 2kBT). (Typical Eg for semi-conductors ranges from about 0.5eV to 6eV at T-293K.) b. In heavily doped n-type silicon,...
Hello, please help with this problem. Thanks in
advance
Q.3 (10+10) (a) Find the electron density (N/V) of a free electron gas in the limit of T O if the Fermi energy of this gas is 5.2 eV. Find also the Fermi temperature of this gas. (b) The carrier concentration in a thin film of aluminum is 2 x 1022/cm and the resistivity of this film is 2 ul2 cm. Estimate the electron relaxation time for this film. Boltzmann constant...
14/04/19
for a free electron gas the density of states is
Show that potassium (atomic density 1.40*10^28 m^-3) with Fermi
energy of electron gas 2.12 eV donates 1 electron per potassium
atom.
2 2 ((2m) 242n
2 2 ((2m) 242n
Qno 2 only
Test 2, ENS345, Spring 2019 1. A photoresistor is made of in-type silicon with resistivity of 10 Qcm and recombination lifetime of 30 ps. The photoresistor is illuminated with light so that the electron-hole pairs generation throughout its volume is resistivity of the photoresistor under illumination 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift...
Please help me
1. In degenerate p-type silicon, a. The Fermi energy is above the valence energy and below the intrinsic Fermi energy b. The Fermi energy is below the valence energy c. The Fermi energy is above the conduction energy d. The Fermi energy is below the conduction energy and above the intrinsic Fermi energy 2. A semiconductor has No 5X 1010 cm3 and N-2X 1018 cm2. It is a. b. C. d. N-type and electrons are the majority...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...
13. The resistivity of aluminum at 25 'C has been measured to be 2.72 x 10-8 0 m. The thermal coefficient of resistivity of aluminum at 0 C is 4.29 x 10-3 K-1. Aluminum has a valency of 3, a density of 2.70 g cm3, and an atomic mass of 27 a. Calculate the resistivity of aluminum at-40°С. (Ans: 2.03 x 103 Ω m) b. What is the thermal coefficient of resistivity at-40'C? (Ans: 5.23x 103K c. Estimate the mean...
pls do ques 1 and 2
1. A photoresistor is made of p-type silicon with resistivity of 0.2 Qcm and recombination lifetime of 200 μ. when illuminated with light, the resistivity of the photoresistor decreases down to 0.05 0cm. Find the electron-hole pairs generation rate during illumination. 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift velocities of...
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